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Showing Results For: MOSFETs

MOSFETs


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AIMZH120R030M1TXKSA1, Infineon
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IQFH55N04NM6ATMA1, Infineon
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ISCH42N04LM7ATMA1, Infineon
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BSC152N15LS5ATMA1, Infineon
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IPD040N03LF2SATMA1, Infineon
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F48MR12W2M1HPB76BPSA1, Infineon
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FF11MR12W2M1HPB11BPSA1, Infineon
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FS13MR12W2M1HPB11BPSA1, Infineon
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IMDQ75R040M1HXUMA1, Infineon
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IMBG120R181M2HXTMA1, Infineon
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IMWH170R1K0M1XKSA1, Infineon
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IMYH200R050M1HXKSA1, Infineon
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IMZA120R030M1HXKSA1, Infineon
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ISC046N13NM6ATMA1, Infineon
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ISZ113N10NM5LF2ATMA1, Infineon
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IAUCN04S6N007TATMA1, Infineon
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IPQC60T022S7XTMA1, Infineon
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IAUAN04S7N004AUMA1, Infineon
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IAUCN04S6N009TATMA1, Infineon
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IAUCN04S6N017TATMA1, Infineon
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IAUCN04S7L005ATMA1, Infineon
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IAUCN04S7L006ATMA1, Infineon
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ISZ056N03LF2SATMA1, Infineon
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AIMBG75R140M1HXTMA1, Infineon
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NTTFS4D9N04XMTAG, onsemi
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R6020KNZC8, ROHM

R6020KNZC8, ROHM

R6020KNZ is Low on-resistance and ultra fast switching speed Power MOSFET. Low on-resistance. Ultra fast switching speed. Parallel use is easy. Pb-free lead plating
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TPCA8105(Q), Toshiba

TPCA8105(Q), Toshiba

MOSFET P-Channel, TPC Series, Toshiba MOSFET Transistors, Toshiba
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FDD4243_F085, Fairchild Semiconductor

FDD4243_F085, Fairchild Semiconductor

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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TK39Z60X,S1F(S, Toshiba

TK39Z60X,S1F(S, Toshiba

MOSFET N-Channel, TK3x Series, Toshiba MOSFET Transistors, Toshiba
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NTMC083NP10M5L, ON Semiconductor

NTMC083NP10M5L, ON Semiconductor

The ON Semiconductor dual n-channel and P- channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion. Small Footprint (5 x 6 mm) for Compact Design Low conduction loss Low RDS(on) to Minimize Conduction Losses Standard footprint Low QG and Capacitance to Minimize Driver Losses The Part is Not ESD Protected These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NTB011N15MC, ON Semiconductor

NTB011N15MC, ON Semiconductor

The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V. Optimized Switching performance Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching 50% Lower Qrr than other MOSFET Suppliers High efficiency with lower switching spike and EMI Lowers Switching Noise/EMI Improved switching FOM particularly Qgd 100% UIL Tested No need or less snubber
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IRF520PBF, Vishay

IRF520PBF, Vishay

The Vishay Semiconductor third generation power mosfet provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Dynamic dV/dt rating Repetitive avalanche rated 175 °C operating temperature Fast switching Ease of paralleling Simple drive requirements
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SQM120N04-1M7L_GE3, Vishay

SQM120N04-1M7L_GE3, Vishay

The Vishay Semiconductor automotive N-channel 40 V (D-S) 175 °C mosfet 120A (Tc) 375W (Tc) have surface mount with TO-263 package type. TrenchFET power mosfet Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualifiedd
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RSU002P03T106, ROHM

RSU002P03T106, ROHM

P-Channel MOSFET Transistors, ROHM MOSFET Transistors, ROHM Semiconductor
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ZXMP4A16KTC, DiodesZetex

ZXMP4A16KTC, DiodesZetex

P-Channel MOSFET, 40V to 90V, Diodes Inc MOSFET Transistors, Diodes Inc.
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TK39J60W,S1VQ(O, Toshiba

TK39J60W,S1VQ(O, Toshiba

MOSFET N-Channel, TK3x Series, Toshiba MOSFET Transistors, Toshiba
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SI3993CDV-T1-GE3, Vishay

SI3993CDV-T1-GE3, Vishay

Dual P-Channel MOSFET, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like MOSFETs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding MOSFETs or any other product.
This depends on the MOSFETs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for MOSFETs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including MOSFETs.
Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.