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Wolfspeed

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C3M0060065K, Wolfspeed

C3M0060065K, Wolfspeed

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The wolfspeeds 650V MOSFETs are optimised for high-performance power electronics applications, including server power supplies, electric vehicle charging systems and many more. 3rd Generation SiC MOSFET technology High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
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C3D06060A, Wolfspeed

C3D06060A, Wolfspeed

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature-independent switching behaviour • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without thermal runaway • Reduction in heatsink requirements • Optimized for PFC boost diode applications Diodes and Rectifiers, Cree Wolfspeed
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C2D05120E, Wolfspeed

C2D05120E, Wolfspeed

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature-independent switching behaviour • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without thermal runaway • Reduction in heatsink requirements • Optimized for PFC boost diode applications Diodes and Rectifiers, Cree Wolfspeed
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C3D10065I, Wolfspeed

C3D10065I, Wolfspeed

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature-independent switching behaviour • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without thermal runaway • Reduction in heatsink requirements • Optimized for PFC boost diode applications Diodes and Rectifiers, Cree Wolfspeed
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C3D02060E, Wolfspeed

C3D02060E, Wolfspeed

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature-independent switching behaviour • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without thermal runaway • Reduction in heatsink requirements • Optimized for PFC boost diode applications Diodes and Rectifiers, Cree Wolfspeed
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C2M0025120D, Wolfspeed

C2M0025120D, Wolfspeed

Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. • Enhancement-mode N-channel SiC technology • High Drain-Source breakdown voltages - up to 1200V • Multiple devices are easy to parallel and simple to drive • High speed switching with low on-resistance • Latch-up resistant operation MOSFET Transistors, Wolfspeed
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C3D03060E, Wolfspeed

C3D03060E, Wolfspeed

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature-independent switching behaviour • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without thermal runaway • Reduction in heatsink requirements • Optimized for PFC boost diode applications Diodes and Rectifiers, Cree Wolfspeed
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C3M0040120J1, Wolfspeed

C3M0040120J1, Wolfspeed

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency 3rd generation SiC MOSFET technology Low impedance package with driver source pin High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
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CAB450M12XM3, Wolfspeed

CAB450M12XM3, Wolfspeed

High Power Density Footprint High Temperature (175 °C) Operation Low Inductance (6.7 nH) Design Implements Conduction-Optimized Third Generation MOSFET Technology Terminal Layout Simplifies Bus Bar Design Integrated Temperature Sensing Dedicated Drain-Kelvin Pin Silicon Nitride Insulator and Copper Baseplate Applications Motor & Traction Drives UPS EV Chargers
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C2D10120D, Wolfspeed

C2D10120D, Wolfspeed

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature-independent switching behaviour • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without thermal runaway • Reduction in heatsink requirements • Optimized for PFC boost diode applications Diodes and Rectifiers, Cree Wolfspeed
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CMF10120D, Wolfspeed

CMF10120D, Wolfspeed

Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. • Enhancement-mode N-channel SiC technology • High Drain-Source breakdown voltages - up to 1200V • Multiple devices are easy to parallel and simple to drive • High speed switching with low on-resistance • Latch-up resistant operation MOSFET Transistors, Wolfspeed
Product Detail
New items
C3D02060A, Wolfspeed

C3D02060A, Wolfspeed

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings • Zero reverse recovery current and forward recovery voltage • Temperature-independent switching behaviour • Extremely fast switching times with minimal losses • Positive temperature coefficient forward voltage • Devices can be paralleled without thermal runaway • Reduction in heatsink requirements • Optimized for PFC boost diode applications Diodes and Rectifiers, Cree Wolfspeed
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