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MOSFETs

MOSFETs are also referred to as MOSFET transistors. A MOSFET is a type of transistor that a capacitor controls. The "Field-Effect" refers to the fact that voltage controls them. Controlling the flow of current between the source and drain terminals is the purpose of a MOSFET. It is employed for switching or amplification of electrical signals and functions very similarly to a switch.

How Do MOSFETs Work?

The Source, Gate, and Drain pins are located on a MOSFET package. A current can flow from the drain to the source pins when a voltage is supplied between the gate and the source terminals. The resistance from the drain to the source will change when a different voltage is supplied to the gate. Resistance increases as applied voltage decreases. The resistance from the drain to the source will decrease as the voltage rises. Like ordinary MOSFETs, power MOSFETs are engineered to handle more power.

How to Choose a MOSFET as a Switch?

There are a few conditions to be observed while selecting the MOSFET as a switch, and those are as follows:

  • Utilize polarity in either the P or N channel.
  • A maximum rating of functions voltage and current measures.
  • Increased Rds ON, which means that control at the Drain to Source terminal when the medium is entirely open.
  • Increased operational frequency.
  • The packaging type is of To-220 and DPAck and many more.

What are Depletion and Enhancement Modes?

Depletion and enhancement are the two operating modes of MOSFET transistors. MOSFETs with depletion operate like closed switches. When no current is applied, the current flows through. A negative voltage will stop the current flow if it is applied. Improved mode MOSFETs are more common than depletion mode MOSFETs and function similarly to a variable resistor. They are available in n-channel and p-channel varieties.

Applications

The applications of MOSFET are:

  • MOSFET amplifiers are extensively used in high-frequency applications.
  • These devices give the DC motor regulating power.
  • These are ideal for building chopper amplifiers since they have faster switching rates.
  • Serves as a passive part for many electrical components.

What is MOSFET Switch Efficiency?

The increased drain current value that a MOSFET is capable of is the key limitation when using the device as a switching device. This indicates that the key factor determining the MOSFET's ability to switch is RDS in the ON state. It is expressed as the difference between the voltage at the drain and the voltage at the source. Only when the transistor is in the ON state does it need to be computed.


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C3M0021120K, Wolfspeed
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C3M0060065K, Wolfspeed
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IMW120R007M1HXKSA1, Infineon
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IMW120R040M1HXKSA1, Infineon
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IMZA120R040M1HXKSA1, Infineon
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IPB040N08NF2SATMA1, Infineon
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IPF050N10NF2SATMA1, Infineon
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IPT017N10NF2SATMA1, Infineon
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IPTC063N15NM5ATMA1, Infineon
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IRFS7540TRLPBF, Infineon
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RQ7L055BGTCR, ROHM
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DMN3055LFDBQ-7, DiodesZetex
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DMN53D0LV-7, DiodesZetex
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DMP2065U-7, DiodesZetex
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IPN60R2K0PFD7SATMA1, Infineon
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IPN95R3K7P7ATMA1, Infineon
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RCJ451N20TL, ROHM
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SH8KA4TB1, ROHM
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IPT039N15N5ATMA1, Infineon
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IRL40SC209, Infineon
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NTMC083NP10M5L, ON Semiconductor

NTMC083NP10M5L, ON Semiconductor

The ON Semiconductor dual n-channel and P- channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion. Small Footprint (5 x 6 mm) for Compact Design Low conduction loss Low RDS(on) to Minimize Conduction Losses Standard footprint Low QG and Capacitance to Minimize Driver Losses The Part is Not ESD Protected These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NTB011N15MC, ON Semiconductor

NTB011N15MC, ON Semiconductor

The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V. Optimized Switching performance Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching 50% Lower Qrr than other MOSFET Suppliers High efficiency with lower switching spike and EMI Lowers Switching Noise/EMI Improved switching FOM particularly Qgd 100% UIL Tested No need or less snubber
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BSC155N06NDATMA1, Infineon

BSC155N06NDATMA1, Infineon

The Infineon Power MOSFET is a Dual N channel 60 V power MOSFET. This MOSFET is 100 avalanche tested. It is a fully qualified according to JEDEC for industrial applications and optimized for technology for drive applications. Halogen free Fast switching RoHS compliant Superior thermal resistance
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IRFZ34NSTRLPBF, Infineon

IRFZ34NSTRLPBF, Infineon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed. Fully avalanche rated
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RUR040N02HZGTL, ROHM

RUR040N02HZGTL, ROHM

The ROHM small signal MOSFET is a MOSFET for switching applications, this is a high-reliability product of automotive grade qualified to AEC-Q101. It is small surface mount package. 1.5V drive Low on resistance Built-in G-S protection diode
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IRF100P219AKMA1, Infineon

IRF100P219AKMA1, Infineon

The Infineon MOSFET StrongIRFET is optimized for broadest availability from distribution partner. It is product validation according to JEDEC standard. Improved gate, avalanche and dynamic dv/dt ruggedness. Very low RDS(on) Excellent gate charge RDS(on) Optimized Qrr Reduced conduction losses Ideal for high switching frequency
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DMP22D5UDA-7B, DiodesZetex

DMP22D5UDA-7B, DiodesZetex

The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte Low on resistance Very low gate threshold voltage ESD protected gate Halogen and antimony Free
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RQ7G080BGTCR, ROHM

RQ7G080BGTCR, ROHM

ROHM RF4G100BG is a power MOSFET with low on resistance and suitable for switching. Low on resistance Small Surface Mount Package TSMT8 Pb free plating and RoHS compliant
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SQS180ELNW-T1_GE3, Vishay

SQS180ELNW-T1_GE3, Vishay

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages. TrenchFET Gen IV power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Wettable flank terminals Low thermal resistance with 0.75 mm profile
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RQ5H030TNTL, ROHM

RQ5H030TNTL, ROHM

RQ5H030TN is a MOSFET with G-S Protection Diode and low on-switching, suitable for switching. Low on-resistance Built-in G-S protection diode Small surface mount package(TSMT3)
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SCT3120ALGC11, ROHM

SCT3120ALGC11, ROHM

Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant
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SIHG33N60EF-GE3, Vishay

SIHG33N60EF-GE3, Vishay

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg) MOSFET Transistors, Vishay Semiconductor
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