SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247 Wolfspeed C3M0032120K
Product Information
Maximum Continuous Drain Current:
63 A
Transistor Material:
SiC
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
3.6V
Package Type:
TO-247-4
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
118 nC @ 4/15V
Channel Type:
N
Length:
16.13mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
283 W
Maximum Gate Source Voltage:
-8 V, 19 V
Height:
23.6mm
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
32 mΩ
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This is SiC N-Channel MOSFET 63 A 1200 V 4-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is C3M0032120K. While 63 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 1200 v drain source voltage. The product carries 3.6v of maximum gate threshold voltage. The package is a sort of to-247-4. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 118 nc @ 4/15v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 283 w maximum power dissipation. It features a maximum gate source voltage of -8 v, 19 v. In addition, the height is 23.6mm. Whereas, the minimum operating temperature of the product is -40 °c. It provides up to 32 mω maximum drain source resistance.
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