Wolfspeed C2M0025120D N-channel SiC MOSFET, 90 A, 1200 V, 3-Pin TO-247
Product Information
Maximum Continuous Drain Current:
90 A
Transistor Material:
SiC
Width:
21.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
161 nC @ 20 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
463 W
Maximum Gate Source Voltage:
+25 V
Height:
5.21mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
3.3V
Maximum Drain Source Resistance:
34 mΩ
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You will get a confirmation email regarding your order of Wolfspeed C2M0025120D N-channel SiC MOSFET, 90 A, 1200 V, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Wolfspeed C2M0025120D N-channel SiC MOSFET, 90 A, 1200 V, 3-Pin TO-247.
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Yes. We ship C2M0025120D Internationally to many countries around the world.
This is N-channel SiC MOSFET 90 A 1200 V 3-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is C2M0025120D. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 21.1mm wide. The product offers single transistor configuration. It has a maximum of 1200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 161 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 463 w maximum power dissipation. It features a maximum gate source voltage of +25 v. In addition, the height is 5.21mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 3.3v . It provides up to 34 mω maximum drain source resistance.
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