N-channel SiC MOSFET 1.7kV 5A TO247
Product Information
Maximum Continuous Drain Current:
5 A
Transistor Material:
SiC
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1700 V
Maximum Gate Threshold Voltage:
3.1V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 20 V, 13 nC @ 5 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
69 W
Maximum Gate Source Voltage:
-5 V, +20 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
3.8V
Maximum Drain Source Resistance:
1.4 Ω
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Yes. We ship C2M1000170D Internationally to many countries around the world.
This is N-channel SiC MOSFET 1.7kV 5A TO247 manufactured by Wolfspeed. The manufacturer part number is C2M1000170D. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 1700 v drain source voltage. The product carries 3.1v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13 nc @ 20 v, 13 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 69 w maximum power dissipation. It features a maximum gate source voltage of -5 v, +20 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 3.8v . It provides up to 1.4 ω maximum drain source resistance.
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