Wolfspeed C3M0065090J N-channel SiC MOSFET, 35 A, 900 V, 7-Pin D2PAK
Product Information
Maximum Continuous Drain Current:
35 A
Transistor Material:
SiC
Width:
10.99mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 15 V
Channel Type:
N
Length:
10.23mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
113 W
Maximum Gate Source Voltage:
+25 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
4.4V
Maximum Drain Source Resistance:
78 mΩ
Checking for live stock
FAQs
Yes. You can also search C3M0065090J on website for other similar products.
We accept all major payment methods for all products including ET13886323. Please check your shopping cart at the time of order.
You can order Wolfspeed brand products with C3M0065090J directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Wolfspeed C3M0065090J N-channel SiC MOSFET, 35 A, 900 V, 7-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Wolfspeed C3M0065090J N-channel SiC MOSFET, 35 A, 900 V, 7-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13886323 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Wolfspeed" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13886323.
Yes. We ship C3M0065090J Internationally to many countries around the world.
This is N-channel SiC MOSFET 35 A 900 V 7-Pin D2PAK manufactured by Wolfspeed. The manufacturer part number is C3M0065090J. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 10.99mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.8v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 15 v. The product is available in [Cannel Type] channel. Its accurate length is 10.23mm. It contains 7 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 113 w maximum power dissipation. It features a maximum gate source voltage of +25 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 4.4v . It provides up to 78 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.