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IRF9530NSPBF, Infineon

IRF9530NSPBF, Infineon

P-Channel Power MOSFET 100V to 150V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
New items
TLE4966KHTSA1, Infineon

TLE4966KHTSA1, Infineon

Hall Effect Switches, Infineon A range of Hall Effect switching ICs from Infineon available with both standard and latching operation. Hall Effect Sensors, Infineon A range of integrated circuits from Infineon utilizing the Hall Effect to implement non-contact switching and sensing functions. Hall Effect ICs fall into three basic categories: Linear Sensors, Switches, and Latches. Linear Sensors have a linear analogue output proportional to magnetic field strength whilst Hall Effect Switches and Latches have a switching output and are activated by magnetic field proximity. Latching switches require a magnetic field of opposite polarity to respectively activate and deactivate the switched output. Hall Effect switches are also available with 2-wire current level operation.
New items
T590N16TOF, Infineon

T590N16TOF, Infineon

Phase Control Capsule Thyristors, Infineon The Infineon capsule range of Phase Control Thyristors (PCT) come assembled in a sealed ceramic press-pack disc housings that offer protection in high humidity environments. They are electrically triggered and are rated up to 1600V. The ceramic disc diameters range from 42mm, 48mm and 58mm with heights of either 14mm or 26mm. Electrical trigger Compact size Thyristors - Infineon The Infineon Phase Control Thyristors (PCT) offer different types of thyristors such as the capsule version, thyristor module and the combination PowerBLOCK thyristor/ diode module. The thyristor module style comes with a stable pressure contact which uses an isolated copper base plate in a range of sizes up to 60mm.
New items
ESD0P8RFLE6327XTSA1, Infineon

ESD0P8RFLE6327XTSA1, Infineon

RF ESD Protection Diodes Transient Voltage Suppressors, Infineon
New items
IRG4PC30UPBF, Infineon

IRG4PC30UPBF, Infineon

Single IGBT up to 20A, Infineon Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
FS75R12W2T4B11BOMA1, Infineon

FS75R12W2T4B11BOMA1, Infineon

IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK TM 2/EconoPACK TM 3/EconoPACK TM 4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
IRFR3708PBF, Infineon

IRFR3708PBF, Infineon

N-Channel Power MOSFET 30V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
New items
IPA90R800C3XKSA1, Infineon

IPA90R800C3XKSA1, Infineon

Infineon CoolMOS™C3 Power MOSFET MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
New items
IR2132SPBF, Infineon

IR2132SPBF, Infineon

MOSFET & IGBT Gate Drivers, Three-Phase, Infineon A range of full-bridge drivers designed to control MOSFET and IGBT power devices in 3-phase applications. The devices feature a maximum blocking voltage of 600 V and low-side control using CMOS and TTL compatible signal levels. MOSFET & IGBT Drivers, Infineon (International Rectifier)
New items
AUIRGP4062D, Infineon

AUIRGP4062D, Infineon

Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
ESD105-B1-02ELS E6327, Infineon

ESD105-B1-02ELS E6327, Infineon

ESD Protectors, Infineon Transient Voltage Suppression (TVS) Diodes from Infineon suitable for applications requiring high-speed ESD protection Transient Voltage Suppressors, Infineon