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MOSFET N-Ch 100V 300A OptiMOS5 HSOF8

MOSFET N-Ch 100V 300A OptiMOS5 HSOF8

OptiMOS™ 5 80V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 80V MOSFETs offer the industry’s lowest R DS(on). Summary of Features: Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% R DS(on) reduction of up to 44% Benefits: Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Target Applications: Telecom Server Solar Low voltage drives Light electric vehicles Adapter
New items
Infineon IRF7530TRPBF Dual N-channel MOSFET, 5.4 A, 20 V HEXFET, 8-Pin MSOP

Infineon IRF7530TRPBF Dual N-channel MOSFET, 5.4 A, 20 V HEXFET, 8-Pin MSOP

Dual N-Channel Power MOSFET, Infineon Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
New items
Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage. High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
New items
Infineon IKP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3

Infineon IKP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3

The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology. High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
New items
Infineon IRFP048NPBF N-channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-247AC

Infineon IRFP048NPBF N-channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-247AC

N-Channel Power MOSFET 55V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
New items
Infineon IRFS4010TRL7PP N-channel MOSFET, 190 A, 100 V HEXFET, 7+Tab-Pin D2PAK

Infineon IRFS4010TRL7PP N-channel MOSFET, 190 A, 100 V HEXFET, 7+Tab-Pin D2PAK

N-Channel Power MOSFET 100V, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
New items
Infineon KIT6W18VP7950VTOBO1 KIT_6W_18V_P7_950V Flyback Controller for Power Supplies

Infineon KIT6W18VP7950VTOBO1 KIT_6W_18V_P7_950V Flyback Controller for Power Supplies

The Infineon evaluation board mainly used in power supplies that are used for server, telecom, and industrial applications there is typically a small bias power supply in addition to the main power converter. High efficiency Low cost solution
New items
Infineon KITDRIVER2EDN7524GTOBO1 KIT_DRIVER_2EDN7524G for 2EDN7524G for SMPS

Infineon KITDRIVER2EDN7524GTOBO1 KIT_DRIVER_2EDN7524G for 2EDN7524G for SMPS

The Infineon evaluation board provides a test platform for Infineon's dual-channel non isolated gate driver IC. It is mainly used in switched mode power supplies applications. Complete and easy-to-use Easy to replace
New items
Infineon REFXDPL8219U40WTOBO1 REF-XDPL8219-U40W Flyback Controller for Lighting

Infineon REFXDPL8219U40WTOBO1 REF-XDPL8219-U40W Flyback Controller for Lighting

The Infineon evaluation board digitally configurable front stage HPF fly back converter with a secondary-side regulated constant voltage output of 54V. It is mainly used in lighting applications. Good performance High efficiency
New items
Silicon N-Channel MOSFET, 40 A, 100 V, 8-Pin PG-TSDSON-8 Infineon BSZ150N10LS3GATMA1

Silicon N-Channel MOSFET, 40 A, 100 V, 8-Pin PG-TSDSON-8 Infineon BSZ150N10LS3GATMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. Pb-free lead plating RoHS compliant Superior thermal resistance 100% avalanche tested Halogen-free according to IEC61249-2-23
New items
Silicon N-Channel MOSFET, 37.9 A, 650 V, 3-Pin PG-TO 220 FullPAK Infineon IPA60R099P6XKSA1

Silicon N-Channel MOSFET, 37.9 A, 650 V, 3-Pin PG-TO 220 FullPAK Infineon IPA60R099P6XKSA1

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Pb-free plating Halogen free mold compound
New items
Silicon N-Channel MOSFET, 17 A, 800 V, 3-Pin PG-TO 220 FullPAK - Narrow Lead Infineon IPAN80R280P7XKSA1

Silicon N-Channel MOSFET, 17 A, 800 V, 3-Pin PG-TO 220 FullPAK - Narrow Lead Infineon IPAN80R280P7XKSA1

The Infineon design of Cool MOS™ P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. Fully optimized portfolio Best-in-class Cool MOS™ quality and reliability Integrated Zener Diode ESD protection Best-in-class FOM RDS(on) * Eoss reduced Qg, Ciss, and Coss