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BCV61CE6327HTSA1, Infineon

BCV61CE6327HTSA1, Infineon

Current Mirror Transistors, Infineon Matched dual NPN and PNP transistors with a common base connection for use as current mirror pairs. Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage Bipolar Transistors, Infineon
New items
EVALLEDICL8002GB3TOBO1, Infineon

EVALLEDICL8002GB3TOBO1, Infineon

ICL8002G-B3 LED Driver Evaluation board The EVALLED-ICL8002G-B3 is demo board for dimmable 20 W LED PAR38 in isolated flyback topology. It is designed for high efficiency, high-power factor, low THD and isolation. The primary side control with the integrated PFC and phase-cut dimming control makes this evaluation board an excellent choice for high efficiency dimmable LED bulbs. Features High efficiency (> 89%) with quasi-resonant isolated flyback operation High-power factor (>0.97) with low THD (Primary side control with integrated PFC Integrated Start-Up Power cell Built-in digital soft-start Cycle-by-cycle current control Auto restart mode for short circuit and thermal protection Adjustable latch-off mode for output overvoltage protection LED Drivers, Infineon
New items
IPB80P04P405ATMA1, Infineon

IPB80P04P405ATMA1, Infineon

Infineon OptiMOS™P P-Channel Power MOSFETs The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
New items
CYW920820EVB-02, Infineon

CYW920820EVB-02, Infineon

The Infineon communication & wireless development tools enables evaluation, prototyping, and development of a wide array of IoT applications along with high-performance compute capability integrating processor with floating point unit. It is a highly integrated device integrating multiple serial interfaces, PWMs, etc. Interfaces to USB power or to a coin cell Eval board with integrated serial flash Input-output interfaces for communications and programming External headers for debugging and connectivity
New items
EVALM1IM231TOBO1, Infineon

EVALM1IM231TOBO1, Infineon

The Infineon evaluation board EVAL-M1-IM231 was developed to support customers during their first steps of applications with the IM231 series CIPOS Micro IPM. In combination with control-boards equipped with the M1 20pin interface connector. Power stage to drive 3-phase motor 600V blocking voltage IGBTs 400W output power Standard testing capability for oscilloscope probes
New items
IRG4PC40UDPBF, Infineon

IRG4PC40UDPBF, Infineon

Co-Pack IGBT up to 20A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
IRS2011SPBF, Infineon

IRS2011SPBF, Infineon

MOSFET & IGBT Gate Drivers, High and Low Side, Infineon MOSFET & IGBT Drivers, Infineon (International Rectifier)
New items
CYALKIT-E04, Infineon

CYALKIT-E04, Infineon

The CYALKIT-E04 S6AE102A and S6AE103A EVK is an easy-to-use energy harvesting evaluation kit used to develop applications that require battery-free operation or battery-life extension. This kit consists of an S6AE102A board, S6AE103A board, and a sensor board, along with a solar module, wires, and a coin battery for testing different configurations. The S6AE102A and S6AE103A boards have pin headers compatible with Arduino. FLEXIBLE ENERGY HARVESTING POWER BOARD:This kit can be used standalone as an energy harvesting power board, or it can be used in conjunction with the CY8CKIT-042-BLE Bluetooth® Low Energy Pioneer Kit that has compatible pin headers with Arduino to develop BLE-based battery-free wireless sensor applications. Input channel: two inputs for series solar cell and primary battery (option) Input voltage range: 2.0 - 5.5 V Input over voltage protection: 5.4 V Startup power: 1.2 μW Output channel: up to two outputs for different system loads Output voltage range: 1.1- 5.2 V
New items
IRF40SC240ARMA1, Infineon

IRF40SC240ARMA1, Infineon

The Infineon’s latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments. It has 175°C operating temperature High current carrying capability
New items
KP229E3518PS2GOKITTOBO1, Infineon

KP229E3518PS2GOKITTOBO1, Infineon

The Infineon MAP pressure sensor 2GO kit is a budget-priced evaluation board equipped with a pressure sensor for pressure sensor measurement combined with an ARM Cortex-M0 CPU. The pressure sensor 2GO kit has a complete set of on-board devices, including an on-board debugger. It is build your own application and gadget with the pressure sensor 2GO kits. Clear and easy to use GUI Pressure measurement Configuration of different transfer functions possible
New items
TLE4929CXHAM18NHAMA1, Infineon

TLE4929CXHAM18NHAMA1, Infineon

The Infineon XENSIV hall based crankshaft sensor for hybrid powertrains and similar industrial applications, such as speedometer or any speed-sensor with high accuracy and low jitter capabilities. Measures speed and position of tooth/pole wheels Switching point in middle of the tooth enables backward compatibility Magnetic stray-field robustness due to differential sensing principle Direction detection and Stop-Start-Algorithm Programmable switching threshold for additional accuracy
New items
IRGP4068D-EPBF, Infineon

IRGP4068D-EPBF, Infineon

Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.