Infineon IRF7780MTRPBF N-channel MOSFET, 89 A, 75 V DirectFET, 6+Tab-Pin ME
Product Information
Maximum Continuous Drain Current:
89 A
Width:
5.05mm
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
ME
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
124 nC @ 10 V
Channel Type:
N
Length:
6.35mm
Pin Count:
6 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
96 W
Series:
DirectFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.53mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
5.7 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF7780MTRPBF N-channel MOSFET, 89 A, 75 V DirectFET, 6+Tab-Pin ME. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7780MTRPBF N-channel MOSFET, 89 A, 75 V DirectFET, 6+Tab-Pin ME.
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Yes. We ship IRF7780MTRPBF Internationally to many countries around the world.
This is N-channel MOSFET 89 A 75 V DirectFET 6+Tab-Pin ME manufactured by Infineon. The manufacturer part number is IRF7780MTRPBF. While 89 a of maximum continuous drain current. Furthermore, the product is 5.05mm wide. It has a maximum of 75 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of me. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 124 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.35mm. It contains 6 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 96 w maximum power dissipation. The product directfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.53mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 5.7 mω maximum drain source resistance.
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