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IGBTs
IGBTs, or Insulated-Gate Bipolar Transistors, are discrete three-terminal semiconductors primarily designed to function as switching devices to allow or stop power flow in various electronic devices. They are robust devices that offer various benefits as they are the fusion of the most common MOSFET and bipolar transistors. These devices are widely used in environments where controlled and medium-speed switching is required. In addition, they are also more economical than comparable silicon MOSFETs.
Why use IGBTs? What benefits do they offer?
Insulated gate bipolar transistors feature excellent attributes with uncountable benefits, such as:
- Feature low on-resistance
- High voltage capacity
- Fast switching speed
- Low switching loss
- Superior current conductive capability
- Low on-stage power dissipation
- Feature forward and reverse blocking attributes
- Voltage control device
- They are easy to turn ON and OFF
- Feature higher switching frequency than the BJT.
Parameters based on the Types of IGBT Transistors:
The various types of IGBT transistors are classified into various categories based on the following parameters:
- Collector voltage
- Maximum voltage
- Switching speed
- Packaging type
Key considerations for choosing the exact IGBT type:
There is a multitude of crucial requirements to consider the exact IGBT type for specific applications. However, the precise power level with particular applications is crucial before choosing your desired IGBT.
Difference between IGBTs and MOSFETs:
In blocking higher voltage rated devices, an IGBT overrides the traditional MOSFET and features a much reduced forward voltage drop. An insulated gate bipolar transistor is more reliable, particularly in industrial applications. Furthermore, they are highly robust and fast and feature high and low saturation voltage attributes compared to MOSFETs.
What are the uses of IGBTs?
IGBTs are the typical components of a wide variety of electronic devices and are used in applications such as:
- Consumer electronics
- Transportation
- Industrial technology
- Aerospace electronic devices
- Electric motors
- Energy sector.
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Popular Items
Popular items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
Popular items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
Popular items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Popular items
6MBP30XSD060-50-P, Fuji Electric
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Reduces power dissipation to contribute to energy saving
Achieves equipment size reduction
Contributes to improving equipment reliability
IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.
Low-Side Igbts Are Separate Emiitter Type
Short Circuit Protection
Temperature Sensor Output Functoin
Under Voltage Protection
Fault Signal Output Function
Input Interface :TTL (3.3v/5V) Active High Logic
Popular items
GT30J121(Q), Toshiba
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IRG4BC30FDPBF, Infineon
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
HGTG30N60C3D, Fairchild Semiconductor
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
IRGS30B60KPBF, Infineon
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
FGD3440G2-F085, onsemi
Automotive Ignition IGBT, Fairchild Semiconductor
These
EcoSPARK
IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Features
Logic-level gate drive
ESD Protection
Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
RS Product Codes
864-8802
FGB3040CS 400V 20A D2PAK
864-8805
FGB3040G2_F085 400V 25A DPAK-2
807-0767
FGD3040G2_F085 400V 25A DPAK
864-8880
FGI3040G2_F085 400V 25A I2PAK
864-8899
FGP3040G2_F085 400V 25A TO220
864-8809
FGB3245G2_F085 450V 23A D2PAK-2
864-8827
FGD3245G2_F085 450V 23A DPAK
807-0776
FGD3440G2_F085 400V 25A DPAK
864-8818
FGB3440G2_F085 400V 25A D2PAK-2
864-8893
FGP3440G2_F085 400V 25A TO220
807-8751
ISL9V5036P3_F085 360V 31A TO220
862-9369
ISL9V5045S3ST_F085 450V 43A D2PAK
Popular items
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