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Showing Results For: IGBTs

IGBTs

IGBTs, or Insulated-Gate Bipolar Transistors, are discrete three-terminal semiconductors primarily designed to function as switching devices to allow or stop power flow in various electronic devices. They are robust devices that offer various benefits as they are the fusion of the most common MOSFET and bipolar transistors. These devices are widely used in environments where controlled and medium-speed switching is required. In addition, they are also more economical than comparable silicon MOSFETs.

Why use IGBTs? What benefits do they offer?

Insulated gate bipolar transistors feature excellent attributes with uncountable benefits, such as:

  • Feature low on-resistance
  • High voltage capacity
  • Fast switching speed
  • Low switching loss
  • Superior current conductive capability 
  • Low on-stage power dissipation
  • Feature forward and reverse blocking attributes
  • Voltage control device
  • They are easy to turn ON and OFF
  • Feature higher switching frequency than the BJT.

Parameters based on the Types of IGBT Transistors:

The various types of IGBT transistors are classified into various categories based on the following parameters:

  • Collector voltage
  • Maximum voltage
  • Switching speed
  • Packaging type

Key considerations for choosing the exact IGBT type:

There is a multitude of crucial requirements to consider the exact IGBT type for specific applications. However, the precise power level with particular applications is crucial before choosing your desired IGBT.

Difference between IGBTs and MOSFETs:

In blocking higher voltage rated devices, an IGBT overrides the traditional MOSFET and features a much reduced forward voltage drop. An insulated gate bipolar transistor is more reliable, particularly in industrial applications. Furthermore, they are highly robust and fast and feature high and low saturation voltage attributes compared to MOSFETs.

What are the uses of IGBTs?

IGBTs are the typical components of a wide variety of electronic devices and are used in applications such as:

  • Consumer electronics
  • Transportation
  • Industrial technology
  • Aerospace electronic devices
  • Electric motors
  • Energy sector.
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SK 150 MLI 066 T, Semikron
3 In Stock
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1 +
£ 120.39
Fairchild Semiconductor
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ISL9V3040P3, Fairchild Semiconductor
8 In Stock
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5 +
£ 2.58
10 +
£ 2.08
100 +
£ 1.71
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FP75R12N2T7BPSA2, Infineon
75 In Stock
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15 +
£ 151.28
30 +
£ 138.67
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BSC0923NDIATMA1, Infineon
98 In Stock
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5 +
£ 0.64
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£ 0.53
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£ 0.46
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FF450R12KE4EHOSA1, Infineon
22 In Stock
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£ 214.82
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£ 196.92
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IKP04N60TXKSA1, Infineon
112 In Stock
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£ 0.79
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£ 0.58
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IKP20N60H3XKSA1, Infineon
113 In Stock
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£ 1.39
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£ 1.27
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FP10R06W1E3BOMA1, Infineon
90 In Stock
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24 +
£ 29.63
120 +
£ 27.16
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IKA06N60TXKSA1, Infineon
108 In Stock
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£ 0.88
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£ 0.70
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FF900R12ME7PB11BPSA1, Infineon
24 In Stock
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6 +
£ 368.30
12 +
£ 334.82
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FF200R12KE4HOSA1, Infineon
81 In Stock
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£ 127.86
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£ 117.21
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FP100R06KE3BOSA1, Infineon
89 In Stock
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£ 169.23
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£ 155.13
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FP10R12W1T4B3BOMA1, Infineon
91 In Stock
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£ 33.94
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£ 31.12
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FS75R12KT3GBOSA1, Infineon
97 In Stock
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£ 159.55
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£ 146.25
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IGW100N60H3FKSA1, Infineon
65 In Stock
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£ 5.95
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£ 5.46
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FP25R12KT4BPSA1, Infineon
13 In Stock
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£ 71.56
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£ 65.59
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IKY100N120CH7XKSA1, Infineon
91 In Stock
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£ 10.14
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£ 9.36
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FP150R12KT4BPSA1, Infineon
40 In Stock
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£ 327.27
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£ 300.00
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FZ250R65KE3NPSA1, Infineon
41 In Stock
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£ 1270.32
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£ 1154.84
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IFS100B12N3E4B31BOSA1, Infineon
44 In Stock
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£ 220.56
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£ 202.18
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BSC0925NDATMA1, Infineon
10102 In Stock
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£ 0.41
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FP100R12N2T7BPSA2, Infineon
71 In Stock
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£ 193.77
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£ 177.62
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FS50R12KT3BPSA1, Infineon
76 In Stock
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£ 101.36
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£ 92.91
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FS50R12W1T7B11BOMA1, Infineon
22 In Stock
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£ 42.51
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£ 38.96
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IKZ75N65EL5XKSA1, Infineon
208 In Stock
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£ 5.46
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£ 5.04
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New Items
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VS-GT100LA65UF, Vishay

VS-GT100LA65UF, Vishay

The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages. Fully isolated package Very low internal inductance Industry standard outline UL approved file E78996
New items
VS-GT90DA60U, Vishay

VS-GT90DA60U, Vishay

The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages. Fully isolated package Very low internal inductance Industry standard outline UL approved file E78996
New items
IKB15N65EH5ATMA1, Infineon

IKB15N65EH5ATMA1, Infineon

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage. High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
New items
IRG4PH50UDPBF, Infineon

IRG4PH50UDPBF, Infineon

Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
FGW75N60HD, Fuji Electric

FGW75N60HD, Fuji Electric

IGBT Discretes, Fuji Electric IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
IRGS30B60KPBF, Infineon

IRGS30B60KPBF, Infineon

Single IGBT over 21A, Infineon Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
RGTH00TS65GC11, ROHM

RGTH00TS65GC11, ROHM

Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
New items
RGTH40TK65GC11, ROHM

RGTH40TK65GC11, ROHM

Low Collector-Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Pb-free Lead Plating, RoHS Compliant
New items
RGT16TM65DGC9, ROHM

RGT16TM65DGC9, ROHM

RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. Low Collector - Emitter Saturation Voltage Low Switching Loss Short Circuit Withstand Time 5μs Built in Very Fast & Soft Recovery FRD (RFN - Series) Pb - free Lead Plating
New items
RGT40TS65DGC13, ROHM

RGT40TS65DGC13, ROHM

The ROHM RGT series is field stop trench IGBT have built in very fast and soft recovery FRD system which are available in TO-247GE package and can be used in general inverter, UPS, power conditioner and welder applications. Low collector - emitter saturation voltage Low switching loss Short circuit withstand time 5μs Built in very fast and soft recovery FRD (RFN - Series) Pb - free lead plating RoHS compliant
New items
6MBP30XSD060-50-P, Fuji Electric

6MBP30XSD060-50-P, Fuji Electric

Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor. Reduces power dissipation to contribute to energy saving Achieves equipment size reduction Contributes to improving equipment reliability IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals. Low-Side Igbts Are Separate Emiitter Type Short Circuit Protection Temperature Sensor Output Functoin Under Voltage Protection Fault Signal Output Function Input Interface :TTL (3.3v/5V) Active High Logic
New items
GT30J121(Q), Toshiba

GT30J121(Q), Toshiba

IGBT Discretes, Toshiba IGBT Discretes & Modules, Toshiba The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding IGBTs or any other product.
This depends on the IGBTs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for IGBTs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including IGBTs.
Yes. We keep updating our stock frequently and if a product like IGBTs is not in stock then we will let you know.