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Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V

FP25R12W2T4BOMA1 Infineon IGBT Module, 39 A 1200 V
FP25R12W2T4BOMA1 Infineon IGBT Module, 39 A 1200 V
Infineon

Product Information

Maximum Continuous Collector Current:
39 A
Maximum Gate Emitter Voltage:
+/-20V
Number of Transistors:
7
Maximum Collector Emitter Voltage:
1200 V
Maximum Power Dissipation:
175 W
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This is IGBT Module 39 A 1200 V manufactured by Infineon. The manufacturer part number is FP25R12W2T4BOMA1. The product has a maximum 39 a continuous collector current . It offers a maximum +/-20v gate emitter voltage . It has 7 transistors . Whereas features a 1200 v of collector emitter voltage (max). Provides up to 175 w maximum power dissipation.

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Datasheet - FP25R12W2T4BOMA1(Technical Reference)

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FAQs

Yes. We ship FP25R12W2T4BOMA1 Internationally to many countries around the world.
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We accept all major payment methods for all products including ET24129375. Please check your shopping cart at the time of order.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET24129375 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET24129375.
You can order Infineon brand products with FP25R12W2T4BOMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V. You can also check on our website or by contacting our customer support team for further order details on Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V.
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