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6MBI450V-120-50, Fuji Electric

6MBI450V-120-50, Fuji Electric

IGBT Modules 6-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT Note Maximum collector current (Ic) values are stated per transistor within the module. IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
6MBI50VA-060-50, Fuji Electric

6MBI50VA-060-50, Fuji Electric

IGBT Modules 6-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT Note Maximum collector current (Ic) values are stated per transistor within the module. IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
6MBP20XSF060-50-P, Fuji Electric

6MBP20XSF060-50-P, Fuji Electric

Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor. Reduces power dissipation to contribute to energy saving Achieves equipment size reduction Contributes to improving equipment reliability IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals. Low-Side Igbts Are Separate Emiitter Type Short Circuit Protection Temperature Sensor Output Functoin Under Voltage Protection Fault Signal Output Function Input Interface :TTL (3.3v/5V) Active High Logic
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6MBP50RA-060-55, Fuji Electric

6MBP50RA-060-55, Fuji Electric

Intelligent IGBT Power Modules, Fuji Electric High performance and high reliability IGBT with six drivers per module. Amplifier for driver Under voltage protection circuit Over current protection circuit IGBT Chip over heating protection Note I C max and P D max values are stated per transistor within the module. Motor Controllers & Drivers, Fuji Electric
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7MBP50VDA-060-50, Fuji Electric

7MBP50VDA-060-50, Fuji Electric

IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals. 6MBP... Without Brake-Chopper 7MBP... With Brake-Chopper IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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2MBI300U4J-120-50, Fuji Electric

2MBI300U4J-120-50, Fuji Electric

IGBT Discretes, Fuji Electric IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
7MBR35VA-120-50, Fuji Electric

7MBR35VA-120-50, Fuji Electric

IGBT Modules 7-Pack, Fuji Electric V-Series IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
1MBi50U4F-120L-50, Fuji Electric

1MBi50U4F-120L-50, Fuji Electric

IGBT Modules 1-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop HH Series, Planar-NPT High-Speed Chooper IGBTs IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
6MBP35VBA-120-50, Fuji Electric

6MBP35VBA-120-50, Fuji Electric

IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals. 6MBP... Without Brake-Chopper 7MBP... With Brake-Chopper IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
2MBI200U4B-120-50, Fuji Electric

2MBI200U4B-120-50, Fuji Electric

IGBT Modules 2-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
2MBI150U4B-120-50, Fuji Electric

2MBI150U4B-120-50, Fuji Electric

IGBT Modules 2-Pack, Fuji Electric V-Series, 6th Generation Field-Stop U/U4 Series, 5th Generation Field-Stop S-Series, 4th Generation NPT IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
FMW47N60S1HF, Fuji Electric

FMW47N60S1HF, Fuji Electric

N-Channel Power MOSFET, Super J MOS, Fuji Electric N-Channel enhancement mode power MOSFETs - Low on-resistance - Low noise - Low switching loss MOSFET Transistors, Fuji Electric