Products Found: 1005
Showing Results For: IGBTs
IGBTs
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Manufacturer Part No
Name
Availability
Price
Rating
Vishay
VS-GT75LA60UF, Vishay
96 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 27.37
50 +
£ 25.34
100 +
£ 24.33
Vishay
VS-GT80DA120U, Vishay
98 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 26.36
50 +
£ 24.33
100 +
£ 23.32
Infineon
DDB6U134N16RRBPSA1, Infineon
74 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 77.39
Infineon
FP30R06KE3BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 86.51
30 +
£ 84.35
Infineon
FP40R12KT3BPSA1, Infineon
43 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 90.61
Infineon
IKD06N60RC2ATMA1, Infineon
5068 In Stock
Check Stock & Lead Times Packaging Options
2500 +
£ 0.33
5000 +
£ 0.30
Infineon
IHW30N110R5XKSA1, Infineon
580 In Stock
Check Stock & Lead Times Packaging Options
240 +
£ 1.95
480 +
£ 1.85
Vishay
VS-GT90SA120U, Vishay
101 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 24.33
50 +
£ 23.32
100 +
£ 22.30
Infineon
FF600R07ME4B11BPSA1, Infineon
8 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 143.94
Infineon
FS35R12W1T7B11BOMA1, Infineon
67 In Stock
Check Stock & Lead Times Packaging Options
24 +
£ 30.98
48 +
£ 29.43
Infineon
FS50R12KE3BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 80.09
Infineon
FS75R12KE3BPSA1, Infineon
23 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 104.60
Infineon
FS75R12KT4B15BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 90.04
Infineon
FS75R17W2E4PB11BPSA1, Infineon
16 In Stock
Check Stock & Lead Times Packaging Options
18 +
£ 51.88
Vishay
VS-GT100DA120UF, Vishay
89 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 29.90
50 +
£ 28.89
100 +
£ 27.88
Vishay
VS-GT75NA60UF, Vishay
97 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 25.34
50 +
£ 24.33
100 +
£ 22.30
Infineon
TDB6HK124N16RRBPSA1, Infineon
45 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 123.59
30 +
£ 113.29
Infineon
FP35R12KT4B11BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 72.48
Infineon
IKD10N60RFATMA1, Infineon
5070 In Stock
Check Stock & Lead Times Packaging Options
2500 +
£ 0.55
Infineon
FP75R12N3T7B11BPSA1, Infineon
8 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 122.96
Infineon
FS150R12N2T7B54BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 133.59
Infineon
FP150R12N3T7B11BPSA1, Infineon
8 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 222.76
Infineon
FP150R12N3T7PB11BPSA1, Infineon
39 In Stock
Check Stock & Lead Times Packaging Options
6 +
£ 252.80
Bourns
BIDD05N60T, Bourns
5020 In Stock
Check Stock & Lead Times Packaging Options
2500 +
£ 0.68
Bourns
BIDW50N65T, Bourns
598 In Stock
Check Stock & Lead Times Packaging Options
600 +
£ 2.25
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Popular Items
Popular items
Popular items
VS-GT100LA65UF, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
Popular items
VS-GT90DA60U, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
Popular items
IKB15N65EH5ATMA1, Infineon
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Popular items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IRGS30B60KPBF, Infineon
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
Popular items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
Popular items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Popular items
FS950R08A6P2BBPSA1, Infineon
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
Popular items
RGT40TS65DGC13, ROHM
The ROHM RGT series is field stop trench IGBT have built in very fast and soft recovery FRD system which are available in TO-247GE package and can be used in general inverter, UPS, power conditioner and welder applications.
Low collector - emitter saturation voltage
Low switching loss
Short circuit withstand time 5μs
Built in very fast and soft recovery FRD (RFN - Series)
Pb - free lead plating
RoHS compliant
New Items
New items
New items
VS-GT100LA65UF, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
VS-GT90DA60U, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
IKB15N65EH5ATMA1, Infineon
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
New items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
IRGS30B60KPBF, Infineon
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
New items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
New items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
New items
FS950R08A6P2BBPSA1, Infineon
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
New items
RGT40TS65DGC13, ROHM
The ROHM RGT series is field stop trench IGBT have built in very fast and soft recovery FRD system which are available in TO-247GE package and can be used in general inverter, UPS, power conditioner and welder applications.
Low collector - emitter saturation voltage
Low switching loss
Short circuit withstand time 5μs
Built in very fast and soft recovery FRD (RFN - Series)
Pb - free lead plating
RoHS compliant
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like IGBTs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding IGBTs or any other product.
This depends on the IGBTs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for IGBTs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including IGBTs.
Yes. We keep updating our stock frequently and if a product like IGBTs is not in stock then we will let you know.