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onsemi FGY75T95LQDT

FGY75T95LQDT onsemi
FGY75T95LQDT
onsemi

Product Information

Dimensions:
15.87 x 4.82 x 20.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
453 W
Maximum Collector Emitter Voltage:
950 V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
150 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
2mJ (on), 1.8mJ (off)
Vce(on) (Max) @ Vge, Ic:
1.69V @ 15V, 75A
Voltage - Collector Emitter Breakdown (Max):
950 V
Td (on/off) @ 25°C:
52ns/496ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
663.3 nC
Reverse Recovery Time (trr):
259 ns
REACH Status:
REACH Unaffected
Test Condition:
600V, 37.5A, 4.7Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
225 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
453 W
Base Product Number:
FGY75
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is FGY75T95LQDT. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 453 w maximum power dissipation. Whereas features a 950 v of collector emitter voltage (max). The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 150 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 2mj (on), 1.8mj (off). Features 1.69v @ 15v, 75a. The maximum collector emitter breakdown voltage of the product is 950 v. Td (on/off) value of 52ns/496ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 663.3 nc gate charge. It has a trr (reverse recovery time) of 259 ns. In addition, it is reach unaffected. Test condition included 600v, 37.5a, 4.7ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 453 w. Moreover, it corresponds to fgy75, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet FGY75T95LQDT(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev Wafer Fab Chgs 30/Apr/2020(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)
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FGY75T95LQDT(Datasheets)
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Packing quantity increase 28/Dec/2020(PCN Packaging)

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FAQs

Yes. You can also search FGY75T95LQDT on website for other similar products.
We accept all major payment methods for all products including ET21518035. Please check your shopping cart at the time of order.
You can order onsemi brand products with FGY75T95LQDT directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi FGY75T95LQDT. You can also check on our website or by contacting our customer support team for further order details on onsemi FGY75T95LQDT.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21518035 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21518035.
Yes. We ship FGY75T95LQDT Internationally to many countries around the world.