650V 80A Field Stop Trench IGBT
Product Information
Dimensions:
16 x 5 x 21mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
404 W
Maximum Collector Emitter Voltage:
650 V
Number of Transistors:
1
Channel Type:
N
Maximum Continuous Collector Current:
144 A
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-247N
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
184pF
Maximum Operating Temperature:
175 °C
Pin Count:
3
Energy Rating:
119.3mJ
Transistor Configuration:
Single
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FAQs
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You can order ROHM brand products with RGTVX6TS65DGC11 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in IGBTs category are shipped in lowest possible time.
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Yes. We ship RGTVX6TS65DGC11 Internationally to many countries around the world.
This is 650V 80A Field Stop Trench IGBT manufactured by ROHM. The manufacturer part number is RGTVX6TS65DGC11. The given dimensions of the product include 16 x 5 x 21mm. The product is available in through hole configuration. Provides up to 404 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 144 a continuous collector current . It offers a maximum ±30v gate emitter voltage . The package is a sort of to-247n. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 184pf gate capacitance . It has a maximum operating temperature of 175 °c. It contains 3 pins. It has approximately 119.3mj energy rating . The product offers single transistor configuration.
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