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New Items
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RSJ400N10TL, ROHM

RSJ400N10TL, ROHM

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. 4V-drive type Nch Power MOSFET Fast Switching Speed Drive circuits can be simple Parallel use is easy Pb Free
New items
R6024KNX, ROHM

R6024KNX, ROHM

R6024KNX is Low on-resistance and ultra fast switching speed Power MOSFET. Low on-resistance. Ultra fast switching speed. Parallel use is easy. Pb-free lead plating
New items
LTR100LJZPFU10L0, ROHM

LTR100LJZPFU10L0, ROHM

The ROHM high power thick film shunt resistors have the terminals at long sides of square shape featuring far higher rated power than the standard resistors, this structure having short distance between the both terminations attains strong soldering fixat Chip resistors for current detection 10 mohm high joint reliability with long side terminations ROHM resistors have obtained ISO9001 / IATF16949 certification Corresponds to AEC-Q200
New items
BZX84B36VLYFHT116, ROHM

BZX84B36VLYFHT116, ROHM

The ROHM Zener diode ideal for voltage regulation. Very common package SOT-23 and high productive efficiency help your design better. This product complies AEC-Q101 qualified. Maximum power dissipation is 250 mW. Small mold type High reliability
New items
DTB543ZE3TL, ROHM

DTB543ZE3TL, ROHM

The ROHM Transistor is a leak absorption type digital transistor with a built-in resistor. The Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Storage temperature ranges from -55°C to 150°C Power dissipation is 150 mW
New items
RB058RSM10STFTL1, ROHM

RB058RSM10STFTL1, ROHM

The ROHM Schottky barrier diode is suitable for switching power supply, freewheel diode and reverse polarity protection. It has a structure of silicon epitaxial planar. The storage temperature ranges between -55°C to 175°C. High reliability Power mold type Ultra low IR
New items
RB088RSM10STL1, ROHM

RB088RSM10STL1, ROHM

The ROHM Schottky barrier diode is suitable for switching power supply, freewheel diode and reverse polarity protection. It has a structure of silicon epitaxial planar. The storage temperature ranges between -55°C to 175°C. High reliability Power mold type Ultra low IR