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Showing Results For: IGBTs
IGBTs
IGBTs, or Insulated-Gate Bipolar Transistors, are discrete three-terminal semiconductors primarily designed to function as switching devices to allow or stop power flow in various electronic devices. They are robust devices that offer various benefits as they are the fusion of the most common MOSFET and bipolar transistors. These devices are widely used in environments where controlled and medium-speed switching is required. In addition, they are also more economical than comparable silicon MOSFETs.
Why use IGBTs? What benefits do they offer?
Insulated gate bipolar transistors feature excellent attributes with uncountable benefits, such as:
- Feature low on-resistance
- High voltage capacity
- Fast switching speed
- Low switching loss
- Superior current conductive capability
- Low on-stage power dissipation
- Feature forward and reverse blocking attributes
- Voltage control device
- They are easy to turn ON and OFF
- Feature higher switching frequency than the BJT.
Parameters based on the Types of IGBT Transistors:
The various types of IGBT transistors are classified into various categories based on the following parameters:
- Collector voltage
- Maximum voltage
- Switching speed
- Packaging type
Key considerations for choosing the exact IGBT type:
There is a multitude of crucial requirements to consider the exact IGBT type for specific applications. However, the precise power level with particular applications is crucial before choosing your desired IGBT.
Difference between IGBTs and MOSFETs:
In blocking higher voltage rated devices, an IGBT overrides the traditional MOSFET and features a much reduced forward voltage drop. An insulated gate bipolar transistor is more reliable, particularly in industrial applications. Furthermore, they are highly robust and fast and feature high and low saturation voltage attributes compared to MOSFETs.
What are the uses of IGBTs?
IGBTs are the typical components of a wide variety of electronic devices and are used in applications such as:
- Consumer electronics
- Transportation
- Industrial technology
- Aerospace electronic devices
- Electric motors
- Energy sector.
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Semikron
SK 150 MLI 066 T, Semikron
3 In Stock
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1 +
£ 120.39
Fairchild Semiconductor
ISL9V3040P3, Fairchild Semiconductor
8 In Stock
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5 +
£ 2.58
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£ 2.08
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£ 1.71
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FP75R12N2T7BPSA2, Infineon
75 In Stock
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15 +
£ 151.28
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£ 138.67
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BSC0923NDIATMA1, Infineon
98 In Stock
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£ 0.64
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£ 0.53
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FF450R12KE4EHOSA1, Infineon
22 In Stock
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£ 196.92
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IKP04N60TXKSA1, Infineon
112 In Stock
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£ 0.79
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£ 0.58
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IKP20N60H3XKSA1, Infineon
113 In Stock
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£ 1.39
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£ 1.27
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F3L150R12W2H3B11BPSA1, Infineon
79 In Stock
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£ 91.21
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£ 83.61
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FS75R12W2T4BOMA1, Infineon
98 In Stock
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£ 60.54
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£ 55.49
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IKB20N60TATMA1, Infineon
2011 In Stock
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1000 +
£ 1.63
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FP50R12W2T7BPSA1, Infineon
74 In Stock
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£ 60.45
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£ 55.41
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FF300R17KE4HOSA1, Infineon
21 In Stock
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£ 215.21
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£ 197.27
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FF600R12IP4BOSA1, Infineon
15 In Stock
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£ 411.28
Infineon
BSC018NE2LSATMA1, Infineon
10100 In Stock
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£ 0.64
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FF450R17ME4BOSA1, Infineon
23 In Stock
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£ 309.25
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£ 283.48
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IKA08N65ET6XKSA1, Infineon
84 In Stock
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£ 0.68
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IKQ140N120CH7XKSA1, Infineon
87 In Stock
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£ 12.28
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£ 11.33
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F3L100R07W2E3B11BOMA1, Infineon
77 In Stock
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£ 62.18
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£ 57.00
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FZ400R12KE4HOSA1, Infineon
99 In Stock
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£ 127.86
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£ 117.21
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IKA10N60TXKSA1, Infineon
109 In Stock
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£ 0.80
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FZ600R12KE4HOSA1, Infineon
100 In Stock
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£ 162.62
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£ 149.07
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IGP20N60H3XKSA1, Infineon
104 In Stock
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£ 1.07
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£ 0.85
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IKB20N60H3ATMA1, Infineon
2010 In Stock
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£ 1.31
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FP25R12KE3BPSA1, Infineon
72 In Stock
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£ 87.75
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£ 80.44
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IKQ100N120CH7XKSA1, Infineon
28 In Stock
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Popular Items
Popular items
Popular items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
Popular items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
Popular items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Popular items
6MBP30XSD060-50-P, Fuji Electric
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Reduces power dissipation to contribute to energy saving
Achieves equipment size reduction
Contributes to improving equipment reliability
IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.
Low-Side Igbts Are Separate Emiitter Type
Short Circuit Protection
Temperature Sensor Output Functoin
Under Voltage Protection
Fault Signal Output Function
Input Interface :TTL (3.3v/5V) Active High Logic
Popular items
GT30J121(Q), Toshiba
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IRG4BC30FDPBF, Infineon
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
HGTG30N60C3D, Fairchild Semiconductor
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IKP40N65H5XKSA1, Infineon
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Popular items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
IKWH40N65WR6XKSA1, Infineon
The Infineon's 40 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
New Items
New items
New items
VS-GT100LA65UF, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
VS-GT90DA60U, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
IKB15N65EH5ATMA1, Infineon
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
New items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
IRGS30B60KPBF, Infineon
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
New items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
New items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
New items
FS950R08A6P2BBPSA1, Infineon
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
New items
RGT40TS65DGC13, ROHM
The ROHM RGT series is field stop trench IGBT have built in very fast and soft recovery FRD system which are available in TO-247GE package and can be used in general inverter, UPS, power conditioner and welder applications.
Low collector - emitter saturation voltage
Low switching loss
Short circuit withstand time 5μs
Built in very fast and soft recovery FRD (RFN - Series)
Pb - free lead plating
RoHS compliant
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like IGBTs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding IGBTs or any other product.
This depends on the IGBTs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for IGBTs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including IGBTs.
Yes. We keep updating our stock frequently and if a product like IGBTs is not in stock then we will let you know.