Toshiba GT30J121(Q) IGBT, 30 A 600 V, 3-Pin TO-3PN
Product Information
Dimensions:
15.9 x 4.8 x 19mm
Mounting Type:
Through Hole
Maximum Continuous Collector Current:
30 A
Maximum Collector Emitter Voltage:
600 V
Height:
19mm
Width:
4.8mm
Length:
15.9mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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Yes. We ship GT30J121(Q) Internationally to many countries around the world.
This is IGBT 30 A 600 V 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is GT30J121(Q). The given dimensions of the product include 15.9 x 4.8 x 19mm. The product is available in through hole configuration. The product has a maximum 30 a continuous collector current . Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 19mm. Furthermore, the product is 4.8mm wide. Its accurate length is 15.9mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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