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STMicroelectronics STGF10NB60SD

STGF10NB60SD STMicroelectronics
STGF10NB60SD
STGF10NB60SD
STMicroelectronics

Product Information

Dimensions:
10.4 x 4.6 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
23 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-220FP
Minimum Operating Temperature:
-55 °C
Gate Capacitance:
610pF
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Energy Rating:
8mJ
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
23 A
Reverse Recovery Time (trr):
37 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
600µJ (on), 5mJ (off)
Vce(on) (Max) @ Vge, Ic:
1.75V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
700ns/1.2µs
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-220-3 Full Pack
Gate Charge:
33 nC
REACH Status:
REACH Unaffected
edacadModel:
STGF10NB60SD Models
edacadModelUrl:
/en/models/1039398
Test Condition:
480V, 10A, 1kOhm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
80 A
Mounting Type:
Through Hole
Series:
PowerMESH™
Supplier Device Package:
TO-220FP
Power - Max:
25 W
Base Product Number:
STGF10
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STGF10NB60SD. The given dimensions of the product include 10.4 x 4.6 x 20mm. The product is available in through hole configuration. Provides up to 25 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 23 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-220fp. Whereas, the minimum operating temperature of the product is -55 °c. It has approximately 610pf gate capacitance . It has a maximum operating temperature of +150 °c. It contains 3 pins. It has approximately 8mj energy rating . The product offers single transistor configuration. The maximum collector current includes 23 a. It has a trr (reverse recovery time) of 37 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 600µj (on), 5mj (off). Features 1.75v @ 15v, 10a. The maximum collector emitter breakdown voltage of the product is 600 v. Td (on/off) value of 700ns/1.2µs. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-220-3 full pack. Features 33 nc gate charge. In addition, it is reach unaffected. Test condition included 480v, 10a, 1kohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product powermesh™, is a highly preferred choice for users. to-220fp is the supplier device package value. The maximum power of the product is 25 w. Moreover, it corresponds to stgf10, a base product number of the product. The product is designated with the ear99 code number.

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STGF10NB60SD, STGP10NB60SD, 16A, 600V, Low Drop IGBT with Soft and Fast Recovery Diode(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
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STG(F,P)10NB60SD(Datasheets)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11785574 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11785574.
Yes. We ship STGF10NB60SD Internationally to many countries around the world.