Infineon IKP20N60H3XKSA1 IGBT, 40 A 600 V, 3-Pin PG-TO-220-3, Through Hole

Infineon

Product Information

Mounting Type:
Through Hole
Maximum Power Dissipation:
170 W
Maximum Collector Emitter Voltage:
600 V
Number of Transistors:
1
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
+/-20V
Package Type:
PG-TO-220-3
Pin Count:
3
RoHs Compliant
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Meet the Infineon IKP20N60H3XKSA1, a rugged, high-speed trench field-stop transistor tailored for UK engineers and OEMs. This through-hole PG‑TO‑220‑3 package delivers 600 V of collector‑emitter voltage, up to 40 A of continuous collector current, and 170 W power dissipation, ensuring dependable performance in demanding power applications. The industry-grade IGBT features +/-20 V gate-emitter tolerance and tough thermal resilience, making it ideal for British designs where power handling, longevity, and temperature stability are non-negotiable.

What Sets the Infineon IKP20N60H3XKSA1 IGBT, Through Hole Apart?

The IKP20N60H3XKSA1 offers an unbeatable blend of high voltage capacity, 40 A current rating, and compact TO‑220‑3 footprint, perfect for both prototyping and production in UK environments. Its efficient trench‑FS technology offers low Vce(sat), fast switching, and robust thermal management, minimising losses, reducing heat, and ensuring long-term reliability in performance-critical applications.

Standout Features and Benefits Include

  • 600 V and 40 A continuous for heavy-duty UK power circuits.
  • Handles up to 170 W, ensuring thermal headroom under load.
  • Trench‑FS design keeps switching losses and EMI low.
  • PG‑TO‑220‑3 through-hole mounting for solid board fit and easy replacement.
  • ±20 V gate-emitter rating ensures flexibility and resilience in varying drive conditions.

Product Use Cases

  • Power Conversion
  • Electric Welding Equipment
  • Industrial Automation Drives
  • Energy Systems
  • General High-Power Switching

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Datasheet - IKP20N60H3XKSA1(Technical Reference)

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