ON Semiconductor NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole
Product Information
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
70 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
70 A
Reverse Recovery Time (trr):
68 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
840µJ (on), 280µJ (off)
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
72ns/132ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
125 nC
REACH Status:
REACH Unaffected
edacadModel:
NGTB35N65FL2WG Models
edacadModelUrl:
/en/models/5022497
Test Condition:
400V, 35A, 10Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
26 Weeks
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
120 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
300 W
Base Product Number:
NGTB35
ECCN:
EAR99
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You will get a confirmation email regarding your order of ON Semiconductor NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NGTB35N65FL2WG IGBT, 70 A 650 V, 3-Pin TO-247, Through Hole.
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This is ON Semiconductor IGBT 70 A 650 V 3-Pin TO-247 Through Hole manufactured by onsemi. The manufacturer part number is NGTB35N65FL2WG. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 70 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 70 a. It has a trr (reverse recovery time) of 68 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 840µj (on), 280µj (off). Features 2v @ 15v, 35a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 72ns/132ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 125 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 35a, 10ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 26 weeks standard lead time. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-247-3 is the supplier device package value. The maximum power of the product is 300 w. Moreover, it corresponds to ngtb35, a base product number of the product. The product is designated with the ear99 code number.
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