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FGD3N60LSDTM, ON Semiconductor

FGD3N60LSDTM ON Semiconductor
ON Semiconductor

Product Information

6.73 x 6.22 x 2.39mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
Maximum Continuous Collector Current:
6 A
Maximum Gate Emitter Voltage:
Package Type:
DPAK (TO-252)
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
Transistor Configuration:
Gate Charge:
Base Part Number:
Detailed Description:
IGBT 600V 6A 40W Surface Mount D-Pak
Reverse Recovery Time (trr):
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
Vce(on) (Max) @ Vge, Ic:
1.5V @ 10V, 3A
Supplier Device Package:
Manufacturer Standard Lead Time:
15 Weeks
Voltage - Collector Emitter Breakdown (Max):
Cut Tape (CT)
Switching Energy:
250µJ (on), 1mJ (off)
Td (on/off) @ 25°C:
Power - Max:
Customer Reference:
Input Type:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Condition:
480V, 3A, 470Ohm, 10V
Current - Collector Pulsed (Icm):
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FGD3N60LSDTM. The given dimensions of the product include 6.73 x 6.22 x 2.39mm. The product is available in surface mount configuration. Provides up to 40 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 6 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of dpak (to-252). Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 12.5nc gate charge. Base Part Number: fgd3. It features igbt 600v 6a 40w surface mount d-pak. It has a trr (reverse recovery time) of 234ns. The maximum collector current includes 6a. Features 1.5v @ 10v, 3a. d-pak is the supplier device package value. It has typical 15 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 600v. In addition, cut tape (ct) is the available packaging type of the product. Provide switching energy up to 250µj (on), 1mj (off). Td (on/off) value of 40ns/600ns. The maximum power of the product is 40w. It carries standard input type. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Test condition included 480v, 3a, 470ohm, 10v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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FGD3N60LSD, IGBT (Insulated Gate Bipolar Transistor)(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)


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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520540 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520540.
Yes. We ship FGD3N60LSDTM Internationally to many countries around the world.