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This is IGBT 40 A 650 V 3-Pin TO-3PN Through Hole manufactured by onsemi. The manufacturer part number is FGA40N65SMD. The given dimensions of the product include 16.2 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 349 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It has a trr (reverse recovery time) of 42 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.5v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 12ns/92ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 119 nc gate charge. In addition, it is reach unaffected. Provide switching energy up to 820µj (on), 260µj (off). Test condition included 400v, 40a, 6ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. It has a long 30 weeks standard lead time. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 349 w. Moreover, it corresponds to fga40n65, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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