onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole
Product Information
Dimensions:
16.2 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
349 W
Maximum Collector Emitter Voltage:
650 V
Channel Type:
N
Maximum Continuous Collector Current:
40 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-3PN
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
80 A
Reverse Recovery Time (trr):
42 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
820µJ (on), 260µJ (off)
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
12ns/92ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
119 nC
REACH Status:
REACH Unaffected
edacadModel:
FGA40N65SMD Models
edacadModelUrl:
/en/models/3137188
Test Condition:
400V, 40A, 6Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
34 Weeks
IGBT Type:
Field Stop
Current - Collector Pulsed (Icm):
120 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PN
Power - Max:
349 W
Base Product Number:
FGA40N65
ECCN:
EAR99
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FAQs
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You will get a confirmation email regarding your order of onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole. You can also check on our website or by contacting our customer support team for further order details on onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466116 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21466116.
Yes. We ship FGA40N65SMD Internationally to many countries around the world.
This is IGBT 40 A 650 V 3-Pin TO-3PN Through Hole manufactured by onsemi. The manufacturer part number is FGA40N65SMD. The given dimensions of the product include 16.2 x 5 x 20.1mm. The product is available in through hole configuration. Provides up to 349 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 40 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-3pn. Whereas, the minimum operating temperature of the product is -55 °c. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 80 a. It has a trr (reverse recovery time) of 42 ns. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 820µj (on), 260µj (off). Features 2.5v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 12ns/92ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 119 nc gate charge. In addition, it is reach unaffected. Test condition included 400v, 40a, 6ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 34 weeks standard lead time. Features an IGBT field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3pn is the supplier device package value. The maximum power of the product is 349 w. Moreover, it corresponds to fga40n65, a base product number of the product. The product is designated with the ear99 code number.
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