Infineon BSC0923NDIATMA1 Dual IGBT, 8-Pin PG-TISON-8, Through Hole

Enrgtech Part No: ET26086096
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Manufacturer Part No:
BSC0923NDIATMA1
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Manufacturer: Infineon

BSC0923NDIATMA1 Infineon Dual IGBT, 8-Pin PG-TISON-8, Through Hole

Product Information

Mounting Type:

Through Hole

Maximum Power Dissipation:

2.5 W

Channel Type:

Maximum Gate Emitter Voltage:

±20V

Package Type:

PG-TISON-8

Configuration:

Dual

Pin Count:

Checking for live stock

The Infineon BSC0923NDIATMA1 is a high-performance dual N‑Channel MOSFET tailored for UK electronics and power design needs. Each channel supports up to 40 A continuous current at a 30 V drain-source rating, driven from low-voltage logic signals in a compact PG‑TISON‑8 surface-mount package with excellent thermal efficiency. With ultra-low on-resistance around 3.8 mΩ, this component delivers efficient conduction with minimal energy loss. Optimised for industrial, automotive, and renewable applications, and rated to endure temperatures up to +150 °C, it ensures reliability and high power density across demanding UK design environments.

Advanced Features and Benefits of Buying the Infineon Dual IGBT, 8-Pin PG-TISON-8

High current capacity (40 A per channel) and 30 V rating, ideal for demanding loads.
Ultra-low on-resistance (~3.8 mΩ) minimises conduction losses and heat.
Compact PG‑TISON‑8 SMD package saves PCB space, making it suitable for compact UK designs.
Wide operating temperature (–55 °C to +150 °C) ensures durability in harsh environments.
Fast switching and low gate charge enhance system efficiency in high-frequency applications.

Product Applicable Areas

High-efficiency buck and boost converters for industrial power modules
Motor control systems in robotics and HVAC for UK manufacturing
EV and renewable energy inverters, supporting UK sustainability goals
Compact power stages in automotive electronics
Power management in embedded and IoT systems requiring high current in a limited space

Datasheet - BSC0923NDIATMA1(Technical Reference)

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