Products Found: 1000
Showing Results For: IGBTs
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Infineon
IGP40N65F5XKSA1, Infineon
63 In Stock
Check Stock & Lead Times Packaging Options
50 +
£ 1.92
100 +
£ 1.82
250 +
£ 1.72
Infineon
IKW20N65ET7XKSA1, Infineon
208 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 2.13
60 +
£ 2.02
150 +
£ 1.94
Infineon
FS50R12KT4B15BPSA1, Infineon
13 In Stock
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15 +
£ 71.52
Infineon
IKD15N60RC2ATMA1, Infineon
5071 In Stock
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2500 +
£ 0.53
Infineon
DDB6U50N22W1RPB11BPSA1, Infineon
50 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 47.47
Vishay
VS-GT180DA120U, Vishay
91 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 32.44
50 +
£ 31.42
Vishay
VS-GT250SA60S, Vishay
92 In Stock
Check Stock & Lead Times Packaging Options
1 +
£ 31.42
5 +
£ 29.40
Infineon
TDB6HK180N16RRB11BPSA1, Infineon
65 In Stock
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15 +
£ 134.05
Infineon
TDB6HK180N16RRBPSA1, Infineon
66 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 115.08
Infineon
FP25R12KT3BPSA1, Infineon
36 In Stock
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15 +
£ 87.94
Infineon
FP35R12KT4B15BPSA1, Infineon
13 In Stock
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15 +
£ 71.52
Infineon
FP35R12KT4BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 71.52
Infineon
FS100R07N2E4BPSA1, Infineon
18 In Stock
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15 +
£ 87.57
Infineon
FF2400RB12IP7BPSA1, Infineon
2 In Stock
Check Stock & Lead Times Packaging Options
2 +
£ 818.21
Vishay
VS-GT90DA120U, Vishay
99 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 27.37
50 +
£ 25.34
100 +
£ 24.33
Infineon
FF900R12ME7B11NPSA1, Infineon
103 In Stock
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10 +
£ 265.46
Infineon
FP15R12KE3GBPSA1, Infineon
104 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 84.73
30 +
£ 82.61
Infineon
FP40R12KE3BPSA1, Infineon
42 In Stock
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15 +
£ 90.61
Infineon
FP50R12N2T7BPSA2, Infineon
13 In Stock
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15 +
£ 86.46
Infineon
FS75R12KT3BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 98.34
Infineon
IGB15N65S5ATMA1, Infineon
2060 In Stock
Check Stock & Lead Times Packaging Options
1000 +
£ 0.77
2000 +
£ 0.73
Infineon
IGP10N60TXKSA1, Infineon
61 In Stock
Check Stock & Lead Times Packaging Options
50 +
£ 1.03
100 +
£ 0.83
250 +
£ 0.79
Infineon
IGP30N65F5XKSA1, Infineon
62 In Stock
Check Stock & Lead Times Packaging Options
50 +
£ 1.45
100 +
£ 1.31
250 +
£ 1.17
Infineon
IGW40N65H5FKSA1, Infineon
64 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 2.42
60 +
£ 2.30
150 +
£ 2.20
Infineon
IKW40N65ET7XKSA1, Infineon
208 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 2.76
60 +
£ 2.62
150 +
£ 2.51
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Popular Items
Popular items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
Popular items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
Popular items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Popular items
6MBP30XSD060-50-P, Fuji Electric
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Reduces power dissipation to contribute to energy saving
Achieves equipment size reduction
Contributes to improving equipment reliability
IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.
Low-Side Igbts Are Separate Emiitter Type
Short Circuit Protection
Temperature Sensor Output Functoin
Under Voltage Protection
Fault Signal Output Function
Input Interface :TTL (3.3v/5V) Active High Logic
Popular items
GT30J121(Q), Toshiba
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IRG4BC30FDPBF, Infineon
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
HGTG30N60C3D, Fairchild Semiconductor
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IKP40N65H5XKSA1, Infineon
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Popular items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
IKWH40N65WR6XKSA1, Infineon
The Infineon's 40 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
Popular items
FF450R12ME7B11BPSA1, Infineon
The Infineon has EconoDUAL 1200 V, 450 A dual TRENCHSTOP IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. This module has high inter-connection reliability and suitable for press-in and soldering process.
High power density
Isolated base plate
Standard housing
New Items
New items
VS-GT100LA65UF, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
VS-GT90DA60U, Vishay
The Vishay IGBT module is designed for increased operating efficiency for power conversion in UPS, SMPS, TIG welding and induction heating. It is easy to assemble due to its direct surface mount package. It is plug in compatible with other SOT 227 packages.
Fully isolated package
Very low internal inductance
Industry standard outline
UL approved file E78996
New items
IKB15N65EH5ATMA1, Infineon
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
New items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
IRGS30B60KPBF, Infineon
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
New items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
New items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
New items
RGT40TS65DGC13, ROHM
The ROHM RGT series is field stop trench IGBT have built in very fast and soft recovery FRD system which are available in TO-247GE package and can be used in general inverter, UPS, power conditioner and welder applications.
Low collector - emitter saturation voltage
Low switching loss
Short circuit withstand time 5μs
Built in very fast and soft recovery FRD (RFN - Series)
Pb - free lead plating
RoHS compliant
New items
6MBP30XSD060-50-P, Fuji Electric
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Reduces power dissipation to contribute to energy saving
Achieves equipment size reduction
Contributes to improving equipment reliability
IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.
Low-Side Igbts Are Separate Emiitter Type
Short Circuit Protection
Temperature Sensor Output Functoin
Under Voltage Protection
Fault Signal Output Function
Input Interface :TTL (3.3v/5V) Active High Logic
New items
GT30J121(Q), Toshiba
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like IGBTs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding IGBTs or any other product.
This depends on the IGBTs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for IGBTs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including IGBTs.
Yes. We keep updating our stock frequently and if a product like IGBTs is not in stock then we will let you know.