Products Found: 1005
Showing Results For: IGBTs
IGBTs
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Infineon
IGP10N60TXKSA1, Infineon
61 In Stock
Check Stock & Lead Times Packaging Options
50 +
£ 1.03
100 +
£ 0.83
250 +
£ 0.79
Infineon
IGP30N65F5XKSA1, Infineon
62 In Stock
Check Stock & Lead Times Packaging Options
50 +
£ 1.45
100 +
£ 1.31
250 +
£ 1.17
Infineon
IGW40N65H5FKSA1, Infineon
64 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 2.42
60 +
£ 2.30
150 +
£ 2.20
Infineon
IKW40N65ET7XKSA1, Infineon
208 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 2.76
60 +
£ 2.62
150 +
£ 2.51
Infineon
IKW75N60H3FKSA1, Infineon
208 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 4.88
60 +
£ 4.64
150 +
£ 4.44
Infineon
IKW75N65ET7XKSA1, Infineon
88 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 3.83
60 +
£ 3.64
150 +
£ 3.49
Infineon
DDB6U104N16RRBPSA1, Infineon
73 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 79.26
30 +
£ 77.28
Infineon
FP50R12KT4B11BPSA1, Infineon
15 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 94.70
Infineon
FS35R12W1T7BOMA1, Infineon
68 In Stock
Check Stock & Lead Times Packaging Options
24 +
£ 29.09
48 +
£ 27.64
Infineon
IKW50N65ET7XKSA1, Infineon
208 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 2.48
60 +
£ 2.36
150 +
£ 2.26
Infineon
IMBG120R350M1HXTMA1, Infineon
2027 In Stock
Check Stock & Lead Times Packaging Options
1000 +
£ 3.36
Infineon
FS3L400R10W3S7FB11BPSA1, Infineon
51 In Stock
Check Stock & Lead Times Packaging Options
8 +
£ 150.74
Infineon
F3L600R10W4S7FC22BPSA1, Infineon
89 In Stock
Check Stock & Lead Times Packaging Options
6 +
£ 213.89
Infineon
FF1800R23IE7BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
2 +
£ 1384.94
Infineon
FF1800R23IE7PBPSA1, Infineon
1 In Stock
Check Stock & Lead Times Packaging Options
1 +
£ 1295.99
Infineon
FF2400RB12IP7PBPSA1, Infineon
1 In Stock
Check Stock & Lead Times Packaging Options
3 +
£ 796.28
Infineon
FF600R07ME4BPSA1, Infineon
8 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 143.34
Infineon
FP15R12W1T7BOMA1, Infineon
53 In Stock
Check Stock & Lead Times Packaging Options
24 +
£ 29.15
48 +
£ 27.70
Infineon
IGP40N65F5XKSA1, Infineon
63 In Stock
Check Stock & Lead Times Packaging Options
50 +
£ 1.92
100 +
£ 1.82
250 +
£ 1.72
Infineon
IKW20N65ET7XKSA1, Infineon
208 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 2.13
60 +
£ 2.02
150 +
£ 1.94
Infineon
DDB6U50N22W1RPB11BPSA1, Infineon
50 In Stock
Check Stock & Lead Times Packaging Options
30 +
£ 47.47
Infineon
FS50R12KT4B15BPSA1, Infineon
13 In Stock
Check Stock & Lead Times Packaging Options
15 +
£ 71.52
Infineon
IKD15N60RC2ATMA1, Infineon
5071 In Stock
Check Stock & Lead Times Packaging Options
2500 +
£ 0.53
Vishay
VS-GT50LA65UF, Vishay
93 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 22.30
50 +
£ 21.29
100 +
£ 20.27
Vishay
VS-GT55NA120UX, Vishay
95 In Stock
Check Stock & Lead Times Packaging Options
10 +
£ 25.34
50 +
£ 24.33
100 +
£ 23.32
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Popular Items
Popular items
Popular items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
Popular items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
Popular items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Popular items
6MBP30XSD060-50-P, Fuji Electric
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Reduces power dissipation to contribute to energy saving
Achieves equipment size reduction
Contributes to improving equipment reliability
IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.
Low-Side Igbts Are Separate Emiitter Type
Short Circuit Protection
Temperature Sensor Output Functoin
Under Voltage Protection
Fault Signal Output Function
Input Interface :TTL (3.3v/5V) Active High Logic
Popular items
GT30J121(Q), Toshiba
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IRG4BC30FDPBF, Infineon
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
HGTG30N60C3D, Fairchild Semiconductor
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Popular items
IKP40N65H5XKSA1, Infineon
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Popular items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Popular items
IKWH40N65WR6XKSA1, Infineon
The Infineon's 40 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
New Items
New items
New items
FGW75N60HD, Fuji Electric
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
RGTH00TS65GC11, ROHM
Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant
New items
RGTH40TK65GC11, ROHM
Low Collector-Emitter Saturation Voltage
High Speed Switching
Low Switching Loss & Soft Switching
Pb-free Lead Plating, RoHS Compliant
New items
RGT16TM65DGC9, ROHM
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
New items
6MBP30XSD060-50-P, Fuji Electric
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor.
Reduces power dissipation to contribute to energy saving
Achieves equipment size reduction
Contributes to improving equipment reliability
IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.
Low-Side Igbts Are Separate Emiitter Type
Short Circuit Protection
Temperature Sensor Output Functoin
Under Voltage Protection
Fault Signal Output Function
Input Interface :TTL (3.3v/5V) Active High Logic
New items
GT30J121(Q), Toshiba
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
IRG4BC30FDPBF, Infineon
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
HGTG30N60C3D, Fairchild Semiconductor
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
New items
IKP40N65H5XKSA1, Infineon
The Infineon 650v fifth generation duopack insulated-gate bipolar transistor and diode of high speed switching series in trenchstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
New items
IRG4PH50UDPBF, Infineon
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
New items
IKWH40N65WR6XKSA1, Infineon
The Infineon's 40 A reverse conducting TRENCHSTOP 5 WR6 IGBT comes in high creep age and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Esw which allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creep age distances.
Monolithically integrated diode
Lowest switching losses
Improved reliability against package contamination
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like IGBTs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding IGBTs or any other product.
This depends on the IGBTs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for IGBTs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including IGBTs.
Yes. We keep updating our stock frequently and if a product like IGBTs is not in stock then we will let you know.