This is IGBT 50 A 600 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50JR22. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
GT50JR22, Silicon N-Channel IGBT Data Sheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is IGBT 50 A 600 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT50JR22. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 1mhz switching speed . It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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Don’t hesitate to ask questions for better clarification.