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Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247

IKW25N120T2FKSA1 Infineon  IGBT, 50 A 1200 V, 3-Pin TO-247
IKW25N120T2FKSA1
Infineon

Product Information

Dimensions:
16.13 x 5.21 x 21.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
349 W
Maximum Collector Emitter Voltage:
1200 V
Channel Type:
N
Maximum Continuous Collector Current:
50 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
TO-247
Minimum Operating Temperature:
-40 °C
Gate Capacitance:
1600pF
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Energy Rating:
4.3mJ
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 50 A 1200 V 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IKW25N120T2FKSA1. The given dimensions of the product include 16.13 x 5.21 x 21.1mm. The product is available in through hole configuration. Provides up to 349 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 50 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -40 °c. It has approximately 1600pf gate capacitance . It has a maximum operating temperature of +175 °c. It contains 3 pins. It has approximately 4.3mj energy rating . The product offers single transistor configuration.

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IKW25N120T2, IGBT in 2nd generation TrenchStop with Soft, Fast Recovery Anti-Parallel Emitter Controlled Diode(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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