Infineon AUIRFN8403TR N-channel MOSFET, 123 A, 40 V HEXFET, 8-Pin PQFN
Product Information
Maximum Continuous Drain Current:
123 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.9V
Maximum Drain Source Resistance:
3.3 mΩ
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.6V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
64 nC @ 10 V
Channel Type:
N
Length:
5.85mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
94 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.17mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon AUIRFN8403TR N-channel MOSFET, 123 A, 40 V HEXFET, 8-Pin PQFN. You can also check on our website or by contacting our customer support team for further order details on Infineon AUIRFN8403TR N-channel MOSFET, 123 A, 40 V HEXFET, 8-Pin PQFN.
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Yes. We ship AUIRFN8403TR Internationally to many countries around the world.
This is N-channel MOSFET 123 A 40 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is AUIRFN8403TR. While 123 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. It provides up to 3.3 mω maximum drain source resistance. The package is a sort of pqfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.6v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 64 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.85mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 94 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.17mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v .
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