Infineon BFR193E6327HTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

Enrgtech Part No: ET16792399
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Manufacturer Part No:
BFR193E6327HTSA1
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Manufacturer: Infineon

BFR193E6327HTSA1 Infineon NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-23

Product Information

Transistor Type:

NPN

Dimensions:

2.9 x 1.3 x 1mm

Mounting Type:

Surface Mount

Maximum Power Dissipation:

580 mW

Maximum Collector Base Voltage:

20 V

Maximum Collector Emitter Voltage:

12 V

Maximum Operating Frequency:

8 GHz

Maximum Emitter Base Voltage:

2 V

Package Type:

SOT-23

Number of Elements per Chip:

Maximum DC Collector Current:

80 mA

Maximum Operating Temperature:

+150 °C

Checking for live stock

The Infineon BFR193E6327HTSA1 is a high-performance, surface‑mount device tailored for the UK electronics market. Encased in a compact SOT‑23 footprint (2.9 × 1.3 × 1 mm), this low‑noise transistor supports up to 8 GHz operation, ideal for modern RF systems. With a maximum collector‑emitter voltage of 12 V, 80 mA current, and 580 mW power dissipation, it thrives in demanding environments up to +150 °C.

Key Reasons to Buy the Infineon NPN RF Bipolar Transistor, 3-Pin SOT-23

UK engineers and designers favour the BFR193E6327HTSA1 for its superior RF performance in compact form. It offers outstanding low-noise gain and broad bandwidth, up to 8 GHz, while enduring temperatures up to +150 °C. Its industry-standard SOT‑23 package ensures seamless PCB integration.

Product Unique Features and Benefits

Low-noise, high-gain performance up to 8 GHz: ensures precise signal amplification in RF circuits.
Compact SOT‑23 package: (2.9 × 1.3 × 1 mm), ideal for space-constrained UK PCB designs.
High thermal tolerance: operates reliably up to +150 °C in harsh environments.
Solid power handling: 12 V, 80 mA, 580 mW, suitable for a wide range of RF applications.
AEC‑Q101 automotive-qualified, RoHS-compliant, meets stringent UK and EU standards.

Versatility in Applications

Low‑noise RF amplifiers in radio and communications
Tuner and front‑end stages for broadcast receivers and TV devices
Wireless modules: DECT handsets, FM/TV tuners, RF modems
High-frequency signal buffering and amplification in UK-based telecom equipment
Automotive-grade RF systems requiring compact, high-reliability components

BFR193 Low Noise Silicon Bipolar RF Transistor Data Sheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.

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