SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 Wolfspeed C3M0075120D
Product Information
Maximum Continuous Drain Current:
30 A
Transistor Material:
SiC
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
54 nC @ 4/15V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
113.6 W
Maximum Gate Source Voltage:
-8 V, 19 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
75 mΩ
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This is SiC N-Channel MOSFET 30 A 1200 V 3-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is C3M0075120D. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 1200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 54 nc @ 4/15v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 113.6 w maximum power dissipation. It features a maximum gate source voltage of -8 v, 19 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 75 mω maximum drain source resistance.
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