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N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK onsemi RFD14N05LSM

RFD14N05LSM N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK onsemi
RFD14N05LSM
RFD14N05LSM
onsemi

Product Information

The RFD14N05LSM from onsemi is a powerful and dependable N-Channel MOSFET capable of handling up to 14 A of current and operating at 50 V, excellent for high-power applications. Featuring a compact 3-pin DPAK package and efficient design, the RFD14N05LSM delivers exceptional performance and reliability in various industrial and automotive applications.

Maximum Drain Source Voltage:
50 V
Typical Gate Charge @ Vgs:
25 nC @ 5 V, 40 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
2.39mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Maximum Drain Source Resistance:
100 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
100mOhm @ 14A, 5V
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
RFD14N05LSM Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/458751
Package:
Tube
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
670 pF @ 25 V
standardLeadTime:
9 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFD14N05
ECCN:
EAR99
RoHs Compliant
Checking for live stock

The metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor commonly used for switching and amplifying electronic signals. Among the different types of MOSFETs, the N-Channel MOSFET is the most widely used in various applications, including power electronics, computer systems, and telecommunications. The RFD14N05LSM N-Channel MOSFET from ON Semiconductor is a high-performance switching device suitable for a wide range of applications, including power conversion, DC-DC converters, and automotive electronics. With its fast-switching speeds, high current handling capability, and compact 3-Pin DPAK package, the RFD14N05LSM is an excellent choice for high-frequency switching applications where a fast response time is required.

Key Features of the RFD14N05LSM N-Channel MOSFET Include:

  • 14 A Continuous Drain Current: The RFD14N05LSM is capable of handling a continuous drain current of up to 14 A, making it suitable for high-current switching applications.
  • 50 V Drain-Source Voltage: The maximum drain-source voltage rating of the device is 50 V, which enables it to handle a wide range of voltage levels in different applications.
  • 3-Pin DPAK Package: The RFD14N05LSM comes in a compact 3-Pin DPAK package, allowing easy integration into different circuit designs and providing low thermal resistance for improved heat dissipation.
  • Fast Switching Performance: With its low on-state resistance and fast switching speeds, the RFD14N05LSM is ideal for high-frequency switching applications requiring a quick response time.

Additional Specifications of the RFD14N05LSM N-Channel MOSFET:

  • Drain-Source Breakdown Voltage: BVDSS = 50 V
  • Drain-Source On-State Resistance: RDS(ON) = 0.065 Ω
  • Continuous Drain Current: ID = 14 A
  • Pulsed Drain Current: IDM = 28 A
  • Gate-Source Voltage: VGS = ±20 V
  • Operating Temperature Range: TJ = -55°C to +150°C

Typical Uses of the RFD14N05LSM N-Channel MOSFET:

  • Power Conversion: The RFD14N05LSM is commonly used in power conversion applications, where it can be used to control the flow of high currents, regulate voltage levels, and improve efficiency.
  • DC-DC Converters: The device is also widely used in DC-DC converters, where it can be used as a switch to regulate the voltage levels between different components.
  • Automotive Electronics: The RFD14N05LSM is suitable for use in automotive electronics, where its fast-switching performance, high current handling capability, and wide operating temperature range make it ideal for use in high-reliability applications.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
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RFD14N05L/RFD14N05LSM/RFP14N05L Power MOSFET Data Sheet(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult PN Mold/Source 01/Dec/2023(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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RFD14N05L/LSM, RFP14N05L(Datasheets)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

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You can order onsemi brand products with RFD14N05LSM directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK onsemi RFD14N05LSM. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK onsemi RFD14N05LSM.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21470724 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21470724.
Yes. We ship RFD14N05LSM Internationally to many countries around the world.