Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
7.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
730 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.94mm
Width:
1.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
85 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.4 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
85mOhm @ 1.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTR4101PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/687096
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
420mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
675 pF @ 10 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTR4101
ECCN:
EAR99
This is P-Channel MOSFET 2.4 A 20 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is NTR4101PT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 7.5 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 730 mw maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.94mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. It provides up to 85 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 85mohm @ 1.6a, 4.5v. The maximum gate charge and given voltages include 8.5 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 420mw (ta). The product's input capacitance at maximum includes 675 pf @ 10 v. It has a long 26 weeks standard lead time. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 1.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntr4101, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.