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N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB onsemi HUF75339P3

HUF75339P3 N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB onsemi
HUF75339P3
HUF75339P3
ET21466169
onsemi

Product Information

Maximum Continuous Drain Current:
75 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
110 nC @ 20 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
12mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
HUF75339P3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/965371
Package:
Tube
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUF75339
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 75 A 55 V 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is HUF75339P3. While 75 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 110 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 12 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 12mohm @ 75a, 10v. The maximum gate charge and given voltages include 130 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 200w (tc). The product's input capacitance at maximum includes 2000 pf @ 25 v. It has a long 13 weeks standard lead time. The product ultrafet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to huf75339, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev Asembly Chg 7/May/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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HUF75339P3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO220B03 Pkg Drawing(Product Drawings)

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FAQs

Yes. You can also search HUF75339P3 on website for other similar products.
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You can order onsemi brand products with HUF75339P3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB onsemi HUF75339P3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB onsemi HUF75339P3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466169 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21466169.
Yes. We ship HUF75339P3 Internationally to many countries around the world.