N-Channel MOSFET, 3.9 A, 800 V, 3-Pin TO-220AB onsemi FQP4N80
Product Information
The N-Channel MOSFET FQP4N80 is a powerhouse semiconductor device capable of handling up to 3.9 A of current and 800 V of voltage in a compact 3-Pin TO-220AB package. Offering superior performance and reliable engineering, the FQP4N80 is the go-to choice for high-power switching applications that demand efficiency and durability.
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Length:
10.1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
130 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.95A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
880 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
3.9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP4
ECCN:
EAR99
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FAQs
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Yes. We ship FQP4N80 Internationally to many countries around the world.
The OnSemi FQP4N80 is a high-performance N-Channel MOSFET created for a wide range of applications, including power management, power conversion, and power switching. It is a high-performance and versatile device suitable for various applications, including power management, transformation, and switching. With its 3-pin TO-220AB package, this MOSFET is easy to integrate into multiple systems, and its 800 V drain-source voltage rating and 3.9 A drain current make it suitable for a range of power management tasks. With its 800 V drain-source voltage, 3.9 A drain current, and fast switching speed, this MOSFET is an efficient and practical choice for power management tasks, and its 3-pin TO-220AB package makes it simple to integrate into a variety of systems.
Potential Applications of N-Channel MOSFET, 3.9 A, 800 V, 3-Pin TO-220AB onsemi FQP4N80:
The FQP4N80 is a versatile and high-performance N-Channel MOSFET that is suitable for use in a wide range of applications, including:
Key Features and Benefits of the N-Channel MOSFET, 3.9 A, 800 V, 3-Pin TO-220AB onsemi FQP4N80:
The FQP4N80 offers some features and benefits that make it an excellent choice for several applications, including:
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