Dual P-Channel MOSFET Transistor & Diode, 90 A, 30 V, 3-Pin PG-TO252 Infineon IPD90P03P4L04ATMA2

IPD90P03P4L04ATMA2 Dual P-Channel MOSFET Transistor & Diode, 90 A, 30 V, 3-Pin PG-TO252 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
P
Maximum Gate Threshold Voltage:
0.3125V
Maximum Drain Source Resistance:
0.0041 O
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
90 A
Pin Count:
3
RoHs Compliant
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This is Dual P-Channel MOSFET Transistor & Diode 90 A 30 V 3-Pin PG-TO252 manufactured by Infineon. The manufacturer part number is IPD90P03P4L04ATMA2. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 0.3125v of maximum gate threshold voltage. It provides up to 0.0041 o maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 90 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPD90P03P4L04ATMA2(Technical Reference)

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