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This is Dual P-channel MOSFET 2.3 A 20 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7104PBF. While 2.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 9.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 400 mω maximum drain source resistance.
For more information please check the datasheets.
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