Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
417 W
Series:
UniFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
20.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs:
35mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
417W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3970 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDA70
ECCN:
EAR99
The FDA70N20 N-Channel MOSFET:
The FDA70N20 is an N-channel MOSFET with a maximum drain current rating of 70A, a maximum drain-source voltage of 200V, and a gate-source voltage of ±20V. It is a versatile and reliable device suitable for a wide range of power electronics applications. Its high current rating, fast switching speed, and low on-resistance make it an efficient and practical choice for high-power circuits. It comes in a 3-pin TO-3PN package, a metal tab transistor package commonly used in power electronics applications. Additionally, the 3-pin TO-3PN package provides excellent thermal performance and mechanical stability, making it suitable for use in demanding applications. The TO-3PN package offers excellent thermal performance and mechanical strength, making it ideal for high-power applications.
Versatile Applications of the N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-3PN onsemi FDA70N20:
The FDA70N20 N-Channel MOSFET is suitable for various applications, including power switching circuits, motor control, and power supply applications. Its high current rating and fast switching speed make it ideal for use in high-power circuits. The low on-resistance of the device ensures low conduction losses, making it an efficient choice for power electronics applications.
Key Advantages of the N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-3PN onsemi FDA70N20 Include:
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