Infineon IRF7946TRPBF N-channel MOSFET, 198 A, 40 V DirectFET, 3+Tab-Pin MX
Product Information
Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
141 nC @ 20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
96 W
Series:
DirectFET
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3.9V
Height:
0.53mm
Width:
5.05mm
Length:
6.35mm
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
198 A
Minimum Gate Threshold Voltage:
2.2V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Maximum Drain Source Resistance:
1.4 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRF7946TRPBF N-channel MOSFET, 198 A, 40 V DirectFET, 3+Tab-Pin MX. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7946TRPBF N-channel MOSFET, 198 A, 40 V DirectFET, 3+Tab-Pin MX.
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Yes. We ship IRF7946TRPBF Internationally to many countries around the world.
This is N-channel MOSFET 198 A 40 V DirectFET 3+Tab-Pin MX manufactured by Infineon. The manufacturer part number is IRF7946TRPBF. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 141 nc @ 20 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 96 w maximum power dissipation. The product directfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.9v of maximum gate threshold voltage. In addition, the height is 0.53mm. Furthermore, the product is 5.05mm wide. Its accurate length is 6.35mm. The package is a sort of directfet isometric. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 198 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2.2v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It provides up to 1.4 mω maximum drain source resistance.
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