Dual N-Channel MOSFET Transistor & Diode, 49 A, 700 V, 3-Pin PG-TO252 Infineon IPD65R190C7ATMA1

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
72mW
Product Type:
MOSFET & Diode
Maximum Drain Source Voltage Vds:
700V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
23nC
Series:
CoolMOS C7
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
0.9V
Height:
2.41mm
Width:
6.22 mm
Length:
6.73mm
Package Type:
TO-252
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
49A
Channel Type:
Type N
Maximum Drain Source Resistance Rds:
900mΩ
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor & Diode 49 A 700 V 3-Pin PG-TO252 manufactured by Infineon. The manufacturer part number is IPD65R190C7ATMA1. The product complies with automotive standard - no. mosfet & diode is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product coolmos c7, is a highly preferred choice for users. In addition, the height is 2.41mm. Furthermore, the product is 6.22 mm wide. Its accurate length is 6.73mm. The package is a sort of to-252. The product is available in [Cannel Type] channel. It contains 3 pins. It has a surface type mount .

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Datasheet - IPD65R190C7ATMA1(Technical Reference)

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