Infineon IRFR7440TRPBF N-channel MOSFET, 180 A, 40 V HEXFET, 3-Pin DPAK
Product Information
Maximum Continuous Drain Current:
180 A
Width:
2.39mm
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
89 nC @ 20 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
6.22mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
2.4 mΩ
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Yes. We ship IRFR7440TRPBF Internationally to many countries around the world.
This is N-channel MOSFET 180 A 40 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR7440TRPBF. While 180 a of maximum continuous drain current. Furthermore, the product is 2.39mm wide. It has a maximum of 40 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 89 nc @ 20 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 6.22mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 2.4 mω maximum drain source resistance.
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