Infineon BSC009NE2LS5ATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO
Product Information
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
6.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
43 nC @ 10 V
Channel Type:
N
Length:
5.49mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
74 W
Series:
OptiMOS 5
Maximum Gate Source Voltage:
+16 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
1.25 mΩ
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This is N-channel MOSFET 100 A 25 V OptiMOS 5 8-Pin SuperSO manufactured by Infineon. The manufacturer part number is BSC009NE2LS5ATMA1. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.35mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 43 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.49mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 74 w maximum power dissipation. The product optimos 5, is a highly preferred choice for users. It features a maximum gate source voltage of +16 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 1.25 mω maximum drain source resistance.
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