Nexperia BSS84AKS,115 Dual P-channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363

Nexperia

Product Information

Maximum Drain Source Voltage:
50 V
Typical Gate Charge @ Vgs:
0.26 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
320 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.1V
Channel Type:
P
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
1.1V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
160 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
7.5 Ω
Height:
1mm
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
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This is Dual P-channel MOSFET 160 mA 50 V 6-Pin SOT-363 manufactured by Nexperia. The manufacturer part number is BSS84AKS,115. It has a maximum of 50 v drain source voltage. With a typical gate charge at Vgs includes 0.26 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 320 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.1v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. Whereas its minimum gate threshold voltage includes 1.1v. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 160 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 7.5 ω maximum drain source resistance. In addition, the height is 1mm. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.

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BSS84AKS, 50V, 160mA Dual P-Channel Trench MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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