Featured Products
74LVC Family Inverters & Buffers, Nexperia Low-Voltage CMOS logic Single gate package Operating Voltage: 1....
45 V, 15 A low VF Trench MEGA Schottky barrier rectifier, Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encaps...
Common Mode filter for USB ports, No room for compromise, The most common camera and display interface used now for portable devices is the diffe...
80 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mo...
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low vol...
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low vol...
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low vol...
P-channel MOSFETs, The perfect fit for your design when N-channels simply arent suitable, Our extensive MOSFET catalog also includes many P-chan...
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low vol...
74HC Family Logic Gates, Nexperia A range of NXP standard Logic Gates from the 74HC Family of CMOS Logic ICs. The 7...
NPN/PNP double resistor-equipped transistors, R1 = 2.2 kOhm, R2 = open, NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Dev...
Popular Categories For Nexperia
Categories For Nexperia
Popular Items
Popular items
74LVC541ABQ,115, Nexperia
74LVC Family Inverters & Buffers, Nexperia
Low-Voltage CMOS logic
Single gate package
Operating Voltage: 1.65 to 5.5 V
Compatibility: Input LVTTL/TTL, Output LVCMOS
74LVC Family
Popular items
PMEG45T15EPDAZ, Nexperia
45 V, 15 A low VF Trench MEGA Schottky barrier rectifier, Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 15 A
Reverse voltage: VR ≤ 45 V
Low forward voltage
Low leakage current due to Trench MEGA Schottky technology
High power capability due to clip-bonding technology and heat sink
Small and thin SMD power plastic package, typical height 0.78 mm
High efficiency DC-to-DC conversion
Switch mode power supply
Freewheeling application
Reverse polarity protection
Low power consumption application
Popular items
PCMF2USB30Z, Nexperia
Common Mode filter for USB ports, No room for compromise, The most common camera and display interface used now for portable devices is the differential MIPI interface running at RF frequencies. To allow operation at typical GSM/3G/LTE frequencies, a strong common-mode suppression over all bands and higher harmonics is needed. At the same time, a wide differential passband is needed to keep signal integrity. Since ESD can enter through gaps in the portable device, strong ESD protection is needed to avoid damage of the electronics or re-setting the system due to ESD strikes
Strong common-mode suppression > 14 dB in the range between 500 MHz and > 8 GHz
Wide passband > 2 GHz, ensuring signal integrity for all MIPI frequencies
ESD ruggedness > 15 kV contact, far exceeding IEC 61000-4-2 (8 kV contact)
Deep snap-back for optimized SoC protection against ESD strikes
Very thin package (0.5 mm max package height)
All LVDS signals needing a passband up to 2 GHz
Popular items
PMEG2010BER,115, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
1 A low Vf MEGA Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 20 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
Popular items
PMEG6010ELRX, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
60 V, 1 A low leakage current Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 60 V
Extremely low leakage current
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
Popular items
PMEG6020ETP,115, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
High-temperature 60 V, 2 A Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
Popular items
PMEG6030ELPX, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
60 V, 3 A low leakage current Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
Extremely low leakage current IR = 340 nA
Average forward current: IF(AV) ≤ 3 A
Reverse voltage: VR ≤ 60 V
Low forward voltage VF = 600 mV
High power capability due to clip-bonding technology
High temperature Tj ≤ 175 °C
Small and flat lead SMD plastic package
AEC-Q101 qualified
Popular items
PMXB120EPEZ, Nexperia
P-channel MOSFETs, The perfect fit for your design when N-channels simply arent suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperias leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1
´
1.0
´
0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
Popular items
PMXB360ENEAZ, Nexperia
80 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package: 1.1
´
1.0
´
0.37 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Popular items
PBSS4041SPN,115, Nexperia
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Popular items
Popular items
74HC00PW,112, Nexperia
74HC Family Logic Gates, Nexperia
A range of NXP standard Logic Gates from the 74HC Family of CMOS Logic ICs. The 74HC Family use silicon gate CMOS technology to achieve operating speeds similar to the LSTTL family but with the low power consumption of standard CMOS integrated circuits.
High-Speed CMOS Logic
Operating Voltage: 2 to 6 V
Compatibility: Input CMOS, Output CMOS
74HC Family
New Items
New items
74LVC541ABQ,115, Nexperia
74LVC Family Inverters & Buffers, Nexperia
Low-Voltage CMOS logic
Single gate package
Operating Voltage: 1.65 to 5.5 V
Compatibility: Input LVTTL/TTL, Output LVCMOS
74LVC Family
New items
PMEG45T15EPDAZ, Nexperia
45 V, 15 A low VF Trench MEGA Schottky barrier rectifier, Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 15 A
Reverse voltage: VR ≤ 45 V
Low forward voltage
Low leakage current due to Trench MEGA Schottky technology
High power capability due to clip-bonding technology and heat sink
Small and thin SMD power plastic package, typical height 0.78 mm
High efficiency DC-to-DC conversion
Switch mode power supply
Freewheeling application
Reverse polarity protection
Low power consumption application
New items
PCMF2USB30Z, Nexperia
Common Mode filter for USB ports, No room for compromise, The most common camera and display interface used now for portable devices is the differential MIPI interface running at RF frequencies. To allow operation at typical GSM/3G/LTE frequencies, a strong common-mode suppression over all bands and higher harmonics is needed. At the same time, a wide differential passband is needed to keep signal integrity. Since ESD can enter through gaps in the portable device, strong ESD protection is needed to avoid damage of the electronics or re-setting the system due to ESD strikes
Strong common-mode suppression > 14 dB in the range between 500 MHz and > 8 GHz
Wide passband > 2 GHz, ensuring signal integrity for all MIPI frequencies
ESD ruggedness > 15 kV contact, far exceeding IEC 61000-4-2 (8 kV contact)
Deep snap-back for optimized SoC protection against ESD strikes
Very thin package (0.5 mm max package height)
All LVDS signals needing a passband up to 2 GHz
New items
PMEG2010BER,115, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
1 A low Vf MEGA Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 20 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
New items
PMEG6010ELRX, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
60 V, 1 A low leakage current Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 60 V
Extremely low leakage current
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
New items
PMEG6020ETP,115, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
High-temperature 60 V, 2 A Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
New items
PMEG6030ELPX, Nexperia
Medium power low VF Schottky rectifiers single ≥ 200 mA, Helping you extend battery life with essential solutions, Our AEC-Q101 qualified low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance and high efficiency. Space saving in small packages, the MEGA Schottky family exemplifies our commitment to developing these essential multi market solutions.
60 V, 3 A low leakage current Schottky barrier rectifier, Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.
Extremely low leakage current IR = 340 nA
Average forward current: IF(AV) ≤ 3 A
Reverse voltage: VR ≤ 60 V
Low forward voltage VF = 600 mV
High power capability due to clip-bonding technology
High temperature Tj ≤ 175 °C
Small and flat lead SMD plastic package
AEC-Q101 qualified
New items
PMXB120EPEZ, Nexperia
P-channel MOSFETs, The perfect fit for your design when N-channels simply arent suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperias leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1
´
1.0
´
0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 350 mΩ
New items
PMXB360ENEAZ, Nexperia
80 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package: 1.1
´
1.0
´
0.37 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
New items
PBSS4041SPN,115, Nexperia
Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
New items
New items
74HC00PW,112, Nexperia
74HC Family Logic Gates, Nexperia
A range of NXP standard Logic Gates from the 74HC Family of CMOS Logic ICs. The 74HC Family use silicon gate CMOS technology to achieve operating speeds similar to the LSTTL family but with the low power consumption of standard CMOS integrated circuits.
High-Speed CMOS Logic
Operating Voltage: 2 to 6 V
Compatibility: Input CMOS, Output CMOS
74HC Family
Don’t hesitate to ask questions for better clarification.