Maximum Continuous Drain Current:
12 A
Width:
8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
Power88
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Channel Type:
N
Length:
8mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
90 W
Maximum Gate Source Voltage:
±30 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
250 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1.2mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Rds On (Max) @ Id, Vgs:
250mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
90W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1010 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
Power88
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCMT250
ECCN:
EAR99
The N-Channel MOSFET is a metal-oxide-semiconductor field-effect transistor widely used for various applications, including power switching, voltage regulation, and amplifying signals. The FCMT250N65S3 N-Channel MOSFET from ON Semiconductor is a high-performance power MOSFET that is ideal for use in high-power applications. With its high-power handling capability, low on-state resistance, and rugged construction, the FCMT250N65S3 is a reliable and efficient solution for power conversion, motor drives, and other high-power applications.
Key Features of N-Channel MOSFET, 12 A, 650 V, 4-Pin Power88 onsemi FCMT250N65S3 Include:
What Advantages Are Offered By N-Channel MOSFET, 12 A, 650 V, 4-Pin Power88 onsemi FCMT250N65S3?
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