What are the shipping charges for products like MOSFETs?

Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.

How do I contact the Customer Support Team?

Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.

Where are your products like MOSFETs manufactured?

Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.

Do you offer any discounts on bulk orders of products like MOSFETs?

Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.

How long will it take to receive the order that I placed for MOSFETs?

Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.

Are your products MOSFETs in stock?

Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.

MOSFETs With Exceptional Quality Available Online With Speedy Delivery

New items

NTBG060N065SC1, ON Semiconductor

The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. Higher system reliability Ultra low gate charge High speed switching and low capacitance

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New items

RCJ451N20TL, ROHM

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type. Low on-resistance Fast switching speed Parallel use is easy Pb-free plating RoHs compliant 100 percent avalanche tested Drive circuits can be simple

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New items

RX3G18BGNC16, ROHM

The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 40 V drain-source voltage and 180 A drain current, tube packing type. Low on-resistance RoHS compliant Pb-free plating 100 percent UIS tested

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New items

SH8KA4TB1, ROHM

The ROHM is small surface mount package, N channel + N channel MOSFET which is suitable for switching and motor drive application with 30 V drain-source voltage and 9 A drain current. Low on-resistance Pb-free lead plating RoHS compliant Halogen free

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New items

IRF40SC240ARMA1, Infineon

The Infineons latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments. It has 175°C operating temperature High current carrying capability

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New items

IRFH9310TRPBF, Infineon

P-Channel Power MOSFET 30V, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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New items

IPP60R160P6XKSA1, Infineon

The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Easy to use/drive Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Very high commutation ruggedness

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New items

IRL40SC209, Infineon

The Infineon N-chaneel Power MOSFET have 7 pin with the D2PAK package.The drain-source voltage (Vds) is 40V.The continuous drain current (Id) is 478 A.The operating temperature is ranges from -55 °C to 175 °C. Surface mount technology Power dissipation is 375 W Typical Applications: DC motors, battery management systems,inverters, and DC-DC converters

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New items

SIR4604DP-T1-GE3, Vishay

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal. TrenchFET Gen V power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested

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New items

SIZF5302DT-T1-RE3, Vishay

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal. TrenchFET Gen V power MOSFET Symmetric dual N-channel Flip chip technology optimal thermal design High side and low side MOSFETs form optimized Combination for 50 % duty cycle Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency For high frequency swi

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New items

SQJQ186ER-T1_GE3, Vishay

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages. TrenchFET Gen IV power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Thin 1.9 mm height

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New items

SQS160ELNW-T1_GE3, Vishay

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages. TrenchFET Gen IV power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Wettable flank terminals Low thermal resistance with 0.75 mm profile

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