Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK Vishay SIHB080N60E-GE3
Product Information
Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
TO-263
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
35 A
Transistor Material:
Silicon
Pin Count:
3
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FAQs
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You can order Vishay brand products with SIHB080N60E-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK Vishay SIHB080N60E-GE3. You can also check on our website or by contacting our customer support team for further order details on Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK Vishay SIHB080N60E-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET26056153 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET26056153.
Yes. We ship SIHB080N60E-GE3 Internationally to many countries around the world.
This is Dual Silicon N-Channel MOSFET 35 A 600 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB080N60E-GE3. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of to-263. It consists of 2 elements per chip. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
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