N-Channel MOSFET, 23.8 A, 600 V, 3-Pin PG-TO 220 Infineon IPP60R160P6XKSA1
Product Information
Maximum Drain Source Voltage:
600 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS P6
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.16 O
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
23.8 A
Transistor Material:
Si
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPP60R160P6XKSA1 Internationally to many countries around the world.
This is N-Channel MOSFET 23.8 A 600 V 3-Pin PG-TO 220 manufactured by Infineon. The manufacturer part number is IPP60R160P6XKSA1. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos p6, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.16 o maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 23.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
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