Dual Silicon N-Channel MOSFET, 47 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK045N60EF-T1GE3
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
PCB Mount
Channel Mode:
Enhancement
Channel Type:
N
Package Type:
PowerPAK 10 x 12
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
47 A
Transistor Material:
Silicon
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual Silicon N-Channel MOSFET, 47 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK045N60EF-T1GE3. You can also check on our website or by contacting our customer support team for further order details on Dual Silicon N-Channel MOSFET, 47 A, 650 V, 8-Pin PowerPAK 10 x 12 Vishay SIHK045N60EF-T1GE3.
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Yes. We ship SIHK045N60EF-T1GE3 Internationally to many countries around the world.
This is Dual Silicon N-Channel MOSFET 47 A 650 V 8-Pin PowerPAK 10 x 12 manufactured by Vishay. The manufacturer part number is SIHK045N60EF-T1GE3. It has a maximum of 650 v drain source voltage. The product is available in pcb mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of powerpak 10 x 12. It consists of 2 elements per chip. While 47 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.
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