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Showing Results For: MOSFETs

MOSFETs


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DiodesZetex
Rohs Verified
DMN29M9UFDF-7, DiodesZetex
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3000 +
£ 0.088
DiodesZetex
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DMN6069SFVW-7, DiodesZetex
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2000 +
£ 0.11
DiodesZetex
Rohs Verified
DMP3097L-7, DiodesZetex
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3000 +
£ 0.054
DiodesZetex
Rohs Verified
DMP65H20D0HSS-13, DiodesZetex
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4000 +
£ 0.30
DiodesZetex
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DMT32M4LPSW-13, DiodesZetex
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2500 +
£ 0.39
DiodesZetex
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DMT6011LPDW-13, DiodesZetex
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2500 +
£ 0.27
DiodesZetex
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DMTH43M8LFGQ-13, DiodesZetex
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3000 +
£ 0.46
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BSM180C12P2E202, ROHM
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4 +
£ 471.31
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BSD214SNH6327XTSA1, Infineon
5998 In Stock
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3000 +
£ 0.049
6000 +
£ 0.047
15000 +
£ 0.045
Rohs Verified
BSS7728NH6327XTSA2, Infineon
71998 In Stock
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3000 +
£ 0.043
6000 +
£ 0.040
15000 +
£ 0.039
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IPDD60R150G7XTMA1, Infineon
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1700 +
£ 1.14
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IPG20N04S4L07AATMA1, Infineon
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5000 +
£ 0.41
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IPL60R065P7AUMA1, Infineon
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3000 +
£ 2.54
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IPS60R1K0CEAKMA1, Infineon
1498 In Stock
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75 +
£ 0.20
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IPZ40N04S5L4R8ATMA1, Infineon
9998 In Stock
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5000 +
£ 0.18
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AUIRF3205ZSTRL, Infineon
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800 +
£ 0.85
1600 +
£ 0.81
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IAUA180N04S5N012AUMA1, Infineon
7998 In Stock
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2000 +
£ 0.54
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IPC100N04S5L1R9ATMA1, Infineon
9998 In Stock
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5000 +
£ 0.29
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IPB048N15N5LFATMA1, Infineon
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1000 +
£ 3.15
Rohs Verified
IPT026N10N5ATMA1, Infineon
1998 In Stock
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2000 +
£ 1.12
Rohs Verified
IPD5N25S3430ATMA1, Infineon
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2500 +
£ 0.40
Rohs Verified
IPD80R1K2P7ATMA1, Infineon
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2500 +
£ 0.25
DiodesZetex
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DMN2053UQ-13, DiodesZetex
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10000 +
£ 0.039
DiodesZetex
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DMN2053UQ-7, DiodesZetex
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3000 +
£ 0.040
DiodesZetex
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DMP27M1UPSW-13, DiodesZetex
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2500 +
£ 0.19
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New Items
New items
FDD4243_F085, Fairchild Semiconductor

FDD4243_F085, Fairchild Semiconductor

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
New items
NTMC083NP10M5L, ON Semiconductor

NTMC083NP10M5L, ON Semiconductor

The ON Semiconductor dual n-channel and P- channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion. Small Footprint (5 x 6 mm) for Compact Design Low conduction loss Low RDS(on) to Minimize Conduction Losses Standard footprint Low QG and Capacitance to Minimize Driver Losses The Part is Not ESD Protected These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
New items
NTB011N15MC, ON Semiconductor

NTB011N15MC, ON Semiconductor

The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V. Optimized Switching performance Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching 50% Lower Qrr than other MOSFET Suppliers High efficiency with lower switching spike and EMI Lowers Switching Noise/EMI Improved switching FOM particularly Qgd 100% UIL Tested No need or less snubber
New items
SQM120N04-1M7L_GE3, Vishay

SQM120N04-1M7L_GE3, Vishay

The Vishay Semiconductor automotive N-channel 40 V (D-S) 175 °C mosfet 120A (Tc) 375W (Tc) have surface mount with TO-263 package type. TrenchFET power mosfet Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualifiedd
New items
TK35N65W5,S1F(S, Toshiba

TK35N65W5,S1F(S, Toshiba

MOSFET N-Channel, TK3x Series, Toshiba MOSFET Transistors, Toshiba
New items
SI1922EDH-T1-GE3, Vishay

SI1922EDH-T1-GE3, Vishay

Dual N-Channel MOSFET, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor
New items
BSS670T116, ROHM

BSS670T116, ROHM

The ROHM BSS670 is single Nch 60V 650mA MOSFET and ESD protection diode are included in the SST3 package. This product is ideal for switching circuit and low-side load switch, relay driver applications. Very fast switching Ultra low voltage drive ESD protection up to 2kV Halogen free
New items
SIHU5N80AE-GE3, Vishay

SIHU5N80AE-GE3, Vishay

The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss). Ultra low gate charge (Qg) Avalanche energy rated (UIS)
New items
BSC155N06NDATMA1, Infineon

BSC155N06NDATMA1, Infineon

The Infineon Power MOSFET is a Dual N channel 60 V power MOSFET. This MOSFET is 100 avalanche tested. It is a fully qualified according to JEDEC for industrial applications and optimized for technology for drive applications. Halogen free Fast switching RoHS compliant Superior thermal resistance
New items
IDK10G120C5XTMA1, Infineon

IDK10G120C5XTMA1, Infineon

The Infineon Schottky Diode has low forward voltage even at high operating temperature. This schottky diode enabling higher frequency and increased power density solutions. This schottky diode offers cost saving features due to reduced heatsink requirements and smaller magnetics. It also offers highest efficiency across the entire load range with temperature independent switching behaviour. RoHS compliant Pb free lead plating Excellent thermal performance Extended surge current capability Tight forward voltage distribution
New items
BSC070N10NS5SCATMA1, Infineon

BSC070N10NS5SCATMA1, Infineon

The Infineon OptiMOS 5 100 V power MOSFETs in SuperSO8 DSC package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation. About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime
New items
BSC112N06LDATMA1, Infineon

BSC112N06LDATMA1, Infineon

The Infineon OptiMOS 60V power MOSFET is dual super SO8 package for high power density. It is high shot-through immunity due to Qgd/Qgs<0.8. Superior thermal resistance High operating temperature up to 175°C
FAQs
We offer free shipping for orders over £200 if delivery is in the UK. All other orders in the UK, shipping from £7.99 depending on the weight and measurement. Mainland Europe shipping charges start from £25. For all other countries shipping charges start from £50 for products like MOSFETs and all others.
You can email us directly at sales@enrgtech.co.uk or via our website for any queries regarding MOSFETs or any other product.
This depends on the MOSFETs individual product and information that can be found on our website.
Yes, we offer special discounts on orders above £200 for MOSFETs and all other products.
UK orders normally take between 2/3 working days. International orders normally take between 3/5 working days for all products including MOSFETs.
Yes. We keep updating our stock frequently and if a product like MOSFETs is not in stock then we will let you know.